MIXA50PM650TMI Specs and Replacement
Type Designator: MIXA50PM650TMI
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 188 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Package: MODULE MIXA50PM650TMI Substitution - IGBTⓘ Cross-Reference Search
MIXA50PM650TMI datasheet
mixa50pm650tmi.pdf
MIXA50PM650TMI tentative VCES = 2x 650 V XPT IGBT Module IC25 = 75 A VCE(sat) = 1,6 V Phase leg with Multi Level Part number MIXA50PM650TMI Backside isolated N Th1 E4 G4 E3 G3 E2 G2 E1 G1 Th2 U Features / Advantages Applications Package MiniPack2B High level of integration AC motro control Isolation Voltage V 3000 Rugged XPT design (Xtreme light Punch Thr... See More ⇒
mixa50wb600ted.pdf
MIXA50WB600TED tentative 3 Brake 3 XPT IGBT Module Rectifier Chopper Inverter VRRM = 1600 V VCES = 600 V VCES = 650 V IDAV = 139 A IC25 = 29 A IC25 = 64 A IFSM = 550 A VCE(sat)= 2 V VCE(sat) = 1.6 V 6-Pack + 3 Rectifier Bridge & Brake Unit + NTC Part number MIXA50WB600TED Backside isolated 21 22 8 16 18 20 7 15 17 19 4 1 2 3 6 5 14 11 12 13 9 10 23 24 Features / Advant... See More ⇒
Specs: MIXA150Q1200VA, MIXA150R1200VA, MIXA20WB1200TMI, MIXA225PF1200TSF, MIXA225RF1200TSF, MIXA300PF1200TSF, MIXA30WB1200TMI, MIXA450PF1200TSF, SGT50T65FD1PT, MIXA50WB600TED, MIXA600AF650TSF, MIXA600CF650TSF, MIXA600PF650TSF, MIXA60HU1200VA, MIXA60WH1200TEH, MIXA81WB1200TEH, MIXD200W650TEH
Keywords - MIXA50PM650TMI transistor spec
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