All IGBT. MIXA50WB600TED Datasheet

 

MIXA50WB600TED Datasheet and Replacement


   Type Designator: MIXA50WB600TED
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 29 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 55 nS
   Qgⓘ - Total Gate Charge, typ: 65 nC
   Package: MODULE
      - IGBT Cross-Reference

 

MIXA50WB600TED Datasheet (PDF)

 ..1. Size:150K  ixys
 mixa50wb600ted.pdf pdf_icon

MIXA50WB600TED

MIXA50WB600TEDtentative3~ Brake 3~XPT IGBT ModuleRectifier Chopper InverterVRRM = 1600 V VCES = 600 V VCES = 650 VIDAV = 139 A IC25 = 29 A IC25 = 64 AIFSM = 550 A VCE(sat)= 2 V VCE(sat) = 1.6 V6-Pack + 3~ Rectifier Bridge & Brake Unit + NTCPart numberMIXA50WB600TEDBackside: isolated21 22816 18 207 15 17 1941 2 3 6 514 11 12 1391023 24Features / Advant

 8.1. Size:2181K  ixys
 mixa50pm650tmi.pdf pdf_icon

MIXA50WB600TED

MIXA50PM650TMItentativeVCES = 2x 650 VXPT IGBT ModuleIC25 = 75 AVCE(sat) = 1,6 VPhase leg with Multi LevelPart numberMIXA50PM650TMIBackside: isolatedNTh1E4 G4 E3 G3 E2 G2 E1 G1Th2UFeatures / Advantages: Applications: Package: MiniPack2B High level of integration AC motro control Isolation Voltage: V~3000 Rugged XPT design (Xtreme light Punch Thr

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: STGW40H120F2 | MIAA10WD600TMH | MMG450WE065B6EN | BSM200GB120DLC

Keywords - MIXA50WB600TED transistor datasheet

 MIXA50WB600TED cross reference
 MIXA50WB600TED equivalent finder
 MIXA50WB600TED lookup
 MIXA50WB600TED substitution
 MIXA50WB600TED replacement

 

 
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