All IGBT. MIXD200W650TEH Datasheet

 

MIXD200W650TEH IGBT. Datasheet pdf. Equivalent


   Type Designator: MIXD200W650TEH
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 680
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 280
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 45
   Total Gate Charge (Qg), typ, nC: 320
   Package: MODULE

 MIXD200W650TEH Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MIXD200W650TEH Datasheet (PDF)

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 mixd200w650teh.pdf

MIXD200W650TEH MIXD200W650TEH

MIXD200W650TEHtentativeVCES = 650VXPT IGBT ModuleI= 280AC25VCE(sat) = 1.5VTrench IGBT6-Pack + NTCPart numberMIXD200W650TEHBackside: isolated30,31,32 16,17,181 5 9192 6 1027,28,29 24,25,26 21,22,23NTC203 7 114 8 1233,34,35 13,14,15Features / Advantages: Applications: Package: E3-Pack High level of integration - only one AC motor drives Iso

Datasheet: MIXA50PM650TMI , MIXA50WB600TED , MIXA600AF650TSF , MIXA600CF650TSF , MIXA600PF650TSF , MIXA60HU1200VA , MIXA60WH1200TEH , MIXA81WB1200TEH , CRG40T60AK3HD , MIXD50W650TED , MIXD600PF650TSF , MIXD80PM650TMI , MIXG120W1200TEH , MIXG180W1200TEH , MIXG240W1200TEH , MP6750 , MP6752 .

 

 
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