MIXD200W650TEH PDF and Equivalents Search

 

MIXD200W650TEH Specs and Replacement

Type Designator: MIXD200W650TEH

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 680 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 280 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 45 nS

Package: MODULE

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MIXD200W650TEH datasheet

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 mixd200w650teh.pdf pdf_icon

MIXD200W650TEH

MIXD200W650TEH tentative VCES = 650V XPT IGBT Module I= 280A C25 VCE(sat) = 1.5V Trench IGBT 6-Pack + NTC Part number MIXD200W650TEH Backside isolated 30,31,32 16,17,18 1 5 9 19 2 6 10 27,28,29 24,25,26 21,22,23 NTC 20 3 7 11 4 8 12 33,34,35 13,14,15 Features / Advantages Applications Package E3-Pack High level of integration - only one AC motor drives Iso... See More ⇒

Specs: MIXA50PM650TMI, MIXA50WB600TED, MIXA600AF650TSF, MIXA600CF650TSF, MIXA600PF650TSF, MIXA60HU1200VA, MIXA60WH1200TEH, MIXA81WB1200TEH, FGA60N65SMD, MIXD50W650TED, MIXD600PF650TSF, MIXD80PM650TMI, MIXG120W1200TEH, MIXG180W1200TEH, MIXG240W1200TEH, MP6750, MP6752

Keywords - MIXD200W650TEH transistor spec

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