MIXD200W650TEH Datasheet and Replacement
Type Designator: MIXD200W650TEH
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 680 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 280 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 45 nS
Qg ⓘ - Total Gate Charge, typ: 320 nC
Package: MODULE
MIXD200W650TEH substitution
MIXD200W650TEH Datasheet (PDF)
mixd200w650teh.pdf
MIXD200W650TEHtentativeVCES = 650VXPT IGBT ModuleI= 280AC25VCE(sat) = 1.5VTrench IGBT6-Pack + NTCPart numberMIXD200W650TEHBackside: isolated30,31,32 16,17,181 5 9192 6 1027,28,29 24,25,26 21,22,23NTC203 7 114 8 1233,34,35 13,14,15Features / Advantages: Applications: Package: E3-Pack High level of integration - only one AC motor drives Iso
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: SKM145GB124D
Keywords - MIXD200W650TEH transistor datasheet
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History: SKM145GB124D
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