MIXD200W650TEH Datasheet and Replacement
Type Designator: MIXD200W650TEH
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 680 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 280 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 45 nS
Package: MODULE
- IGBT Cross-Reference
MIXD200W650TEH Datasheet (PDF)
mixd200w650teh.pdf
MIXD200W650TEHtentativeVCES = 650VXPT IGBT ModuleI= 280AC25VCE(sat) = 1.5VTrench IGBT6-Pack + NTCPart numberMIXD200W650TEHBackside: isolated30,31,32 16,17,181 5 9192 6 1027,28,29 24,25,26 21,22,23NTC203 7 114 8 1233,34,35 13,14,15Features / Advantages: Applications: Package: E3-Pack High level of integration - only one AC motor drives Iso
Datasheet: MIXA50PM650TMI , MIXA50WB600TED , MIXA600AF650TSF , MIXA600CF650TSF , MIXA600PF650TSF , MIXA60HU1200VA , MIXA60WH1200TEH , MIXA81WB1200TEH , GT30F126 , MIXD50W650TED , MIXD600PF650TSF , MIXD80PM650TMI , MIXG120W1200TEH , MIXG180W1200TEH , MIXG240W1200TEH , MP6750 , MP6752 .
History: STGW28IH125DF | PM25CL1A120 | RJP60V0DPM | MG300N1US1 | GT10G101 | CT20VM-8 | MMG200D120B6TN
Keywords - MIXD200W650TEH transistor datasheet
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History: STGW28IH125DF | PM25CL1A120 | RJP60V0DPM | MG300N1US1 | GT10G101 | CT20VM-8 | MMG200D120B6TN
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