MIXD50W650TED PDF and Equivalents Search

 

MIXD50W650TED Specs and Replacement

Type Designator: MIXD50W650TED

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 190 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 71 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 45 nS

Package: MODULE

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MIXD50W650TED datasheet

 ..1. Size:202K  ixys
 mixd50w650ted.pdf pdf_icon

MIXD50W650TED

MIXD50W650TED VCES = 650 V Six-Pack IC25 = 71 A Trench XPT IGBT VCE(sat) typ. =1.55 V Part name (Marking on product) MIXD50W650TED 15, 16 25, 26 1 5 9 17 2 6 10 23, 24 E72873 21, 22 NTC 19, 20 Pin configuration see outlines. 18 3 7 11 4 8 12 13, 14 27, 28 Features Application Package Easy paralleling due to the positive AC motor drives "E2-Pack" stand... See More ⇒

Specs: MIXA50WB600TED, MIXA600AF650TSF, MIXA600CF650TSF, MIXA600PF650TSF, MIXA60HU1200VA, MIXA60WH1200TEH, MIXA81WB1200TEH, MIXD200W650TEH, SGT50T65FD1PN, MIXD600PF650TSF, MIXD80PM650TMI, MIXG120W1200TEH, MIXG180W1200TEH, MIXG240W1200TEH, MP6750, MP6752, MP6753

Keywords - MIXD50W650TED transistor spec

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