All IGBT. MIXD50W650TED Datasheet

 

MIXD50W650TED Datasheet and Replacement


   Type Designator: MIXD50W650TED
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 190 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 71 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 45 nS
   Qg ⓘ - Total Gate Charge, typ: 130 nC
   Package: MODULE
 

 MIXD50W650TED substitution

   - IGBT ⓘ Cross-Reference Search

 

MIXD50W650TED Datasheet (PDF)

 ..1. Size:202K  ixys
 mixd50w650ted.pdf pdf_icon

MIXD50W650TED

MIXD50W650TEDVCES = 650 VSix-PackIC25 = 71 ATrench XPT IGBTVCE(sat) typ. =1.55 VPart name (Marking on product)MIXD50W650TED15, 1625, 2615 91726 1023, 24E7287321, 22NTC19, 20Pin configuration see outlines.1837 1148 1213, 1427, 28Features: Application: Package: Easy paralleling due to the positive AC motor drives "E2-Pack" stand

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: 2MBI300TA-060 | NGTB30N65IHL2WG

Keywords - MIXD50W650TED transistor datasheet

 MIXD50W650TED cross reference
 MIXD50W650TED equivalent finder
 MIXD50W650TED lookup
 MIXD50W650TED substitution
 MIXD50W650TED replacement

 

 
Back to Top

 


 
.