All IGBT. MIXD50W650TED Datasheet

 

MIXD50W650TED IGBT. Datasheet pdf. Equivalent


   Type Designator: MIXD50W650TED
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 190 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 71 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 45 nS
   Package: MODULE

 MIXD50W650TED Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MIXD50W650TED Datasheet (PDF)

 ..1. Size:202K  ixys
 mixd50w650ted.pdf

MIXD50W650TED MIXD50W650TED

MIXD50W650TEDVCES = 650 VSix-PackIC25 = 71 ATrench XPT IGBTVCE(sat) typ. =1.55 VPart name (Marking on product)MIXD50W650TED15, 1625, 2615 91726 1023, 24E7287321, 22NTC19, 20Pin configuration see outlines.1837 1148 1213, 1427, 28Features: Application: Package: Easy paralleling due to the positive AC motor drives "E2-Pack" stand

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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