All IGBT. MIXD600PF650TSF Datasheet

 

MIXD600PF650TSF Datasheet and Replacement


   Type Designator: MIXD600PF650TSF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 850 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 100 nS
   Qg ⓘ - Total Gate Charge, typ: 960 nC
   Package: MODULE
 

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MIXD600PF650TSF Datasheet (PDF)

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MIXD600PF650TSF

MIXD600PF650TSFVCES = 2x 650 VXPT IGBT ModuleIC25 = 750 AVCE(sat) = 1.5 VPhase leg + free wheeling Diodes + NTCPart numberMIXD600PF650TSFBackside: isolatedE7287352 1 8 7 94310/116Features / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: 3000 V~ power semiconductor module required

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MG75Q1BS11 | FGA25N120ANTDTU | IXGP20N60B | XD075H065CX1S3 | MIXA50WB600TED

Keywords - MIXD600PF650TSF transistor datasheet

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