MIXD600PF650TSF PDF and Equivalents Search

 

MIXD600PF650TSF Specs and Replacement

Type Designator: MIXD600PF650TSF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 850 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Package: MODULE

 MIXD600PF650TSF Substitution

- IGBTⓘ Cross-Reference Search

 

MIXD600PF650TSF datasheet

 0.1. Size:218K  ixys
 mixd600pf650tsf.pdf pdf_icon

MIXD600PF650TSF

MIXD600PF650TSF VCES = 2x 650 V XPT IGBT Module IC25 = 750 A VCE(sat) = 1.5 V Phase leg + free wheeling Diodes + NTC Part number MIXD600PF650TSF Backside isolated E72873 5 2 1 8 7 9 4 3 10/11 6 Features / Advantages Applications Package SimBus F High level of integration - only one AC motor drives Isolation Voltage 3000 V power semiconductor module required... See More ⇒

Specs: MIXA600AF650TSF, MIXA600CF650TSF, MIXA600PF650TSF, MIXA60HU1200VA, MIXA60WH1200TEH, MIXA81WB1200TEH, MIXD200W650TEH, MIXD50W650TED, GT30F126, MIXD80PM650TMI, MIXG120W1200TEH, MIXG180W1200TEH, MIXG240W1200TEH, MP6750, MP6752, MP6753, MP6757

Keywords - MIXD600PF650TSF transistor spec

 MIXD600PF650TSF cross reference
 MIXD600PF650TSF equivalent finder
 MIXD600PF650TSF lookup
 MIXD600PF650TSF substitution
 MIXD600PF650TSF replacement

 

 

 

 

↑ Back to Top
.