All IGBT. MIXD80PM650TMI Datasheet

 

MIXD80PM650TMI Datasheet and Replacement


   Type Designator: MIXD80PM650TMI
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 275 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 108 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 45 nS
   Qgⓘ - Total Gate Charge, typ: 130 nC
   Package: MODULE
      - IGBT Cross-Reference

 

MIXD80PM650TMI Datasheet (PDF)

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MIXD80PM650TMI

MIXD80PM650TMIIC80 (T1/T4) = 82 AIGBT ModulesIC80 (T2/T3) = 110 AMulti LevelVCES = 650 VXPT IGBT TechnologyVCE(sat) typ. = 1.5 VPart name (Marking on product)MIXD80PM650TMITh1 +D1NTCT1G1E1Th2D5D2T2G2E2N UD3T3G3E3D6D4T4G4E4_Features: Application: Package: Easy paralleling due to the positive AC motor control Compatibl

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: HGTP7N60B3

Keywords - MIXD80PM650TMI transistor datasheet

 MIXD80PM650TMI cross reference
 MIXD80PM650TMI equivalent finder
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