All IGBT. MIXD80PM650TMI Datasheet

 

MIXD80PM650TMI Datasheet and Replacement


   Type Designator: MIXD80PM650TMI
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 275 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 108 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 45 nS
   Package: MODULE
 

 MIXD80PM650TMI substitution

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MIXD80PM650TMI Datasheet (PDF)

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MIXD80PM650TMI

MIXD80PM650TMIIC80 (T1/T4) = 82 AIGBT ModulesIC80 (T2/T3) = 110 AMulti LevelVCES = 650 VXPT IGBT TechnologyVCE(sat) typ. = 1.5 VPart name (Marking on product)MIXD80PM650TMITh1 +D1NTCT1G1E1Th2D5D2T2G2E2N UD3T3G3E3D6D4T4G4E4_Features: Application: Package: Easy paralleling due to the positive AC motor control Compatibl

Datasheet: MIXA600CF650TSF , MIXA600PF650TSF , MIXA60HU1200VA , MIXA60WH1200TEH , MIXA81WB1200TEH , MIXD200W650TEH , MIXD50W650TED , MIXD600PF650TSF , SGT50T65FD1PN , MIXG120W1200TEH , MIXG180W1200TEH , MIXG240W1200TEH , MP6750 , MP6752 , MP6753 , MP6757 , MSAGA11F120D .

History: IXYL60N450 | KGT25N135KDH | CM150TX-24S1 | F3L100R07W2E3_B11 | SGT10T60SDM1D | NCE75TD120BTP | MIXA30W1200TED

Keywords - MIXD80PM650TMI transistor datasheet

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