MIXD80PM650TMI Datasheet and Replacement
Type Designator: MIXD80PM650TMI
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 275 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 108 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 45 nS
Package: MODULE
MIXD80PM650TMI substitution
MIXD80PM650TMI Datasheet (PDF)
mixd80pm650tmi.pdf
MIXD80PM650TMIIC80 (T1/T4) = 82 AIGBT ModulesIC80 (T2/T3) = 110 AMulti LevelVCES = 650 VXPT IGBT TechnologyVCE(sat) typ. = 1.5 VPart name (Marking on product)MIXD80PM650TMITh1 +D1NTCT1G1E1Th2D5D2T2G2E2N UD3T3G3E3D6D4T4G4E4_Features: Application: Package: Easy paralleling due to the positive AC motor control Compatibl
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: FGH40T65UQDF | SPT15N65T1 | MIXA10W1200TML | IXGP2N100 | NGTB40N120IHRWG | AOK50B60D1 | MII300-12A4
Keywords - MIXD80PM650TMI transistor datasheet
MIXD80PM650TMI cross reference
MIXD80PM650TMI equivalent finder
MIXD80PM650TMI lookup
MIXD80PM650TMI substitution
MIXD80PM650TMI replacement
History: FGH40T65UQDF | SPT15N65T1 | MIXA10W1200TML | IXGP2N100 | NGTB40N120IHRWG | AOK50B60D1 | MII300-12A4
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc1175 | 2sc632 | mje15030 transistor equivalent | 13003b | 2n6121 | 2sc1312 | bf495 transistor equivalent | 2sc1313