MIXD80PM650TMI PDF and Equivalents Search

 

MIXD80PM650TMI Specs and Replacement

Type Designator: MIXD80PM650TMI

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 275 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 108 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 45 nS

Package: MODULE

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MIXD80PM650TMI datasheet

 ..1. Size:233K  ixys
 mixd80pm650tmi.pdf pdf_icon

MIXD80PM650TMI

MIXD80PM650TMI IC80 (T1/T4) = 82 A IGBT Modules IC80 (T2/T3) = 110 A Multi Level VCES = 650 V XPT IGBT Technology VCE(sat) typ. = 1.5 V Part name (Marking on product) MIXD80PM650TMI Th1 + D1 NTC T1 G1 E1 Th2 D5 D2 T2 G2 E2 N U D3 T3 G3 E3 D6 D4 T4 G4 E4 _ Features Application Package Easy paralleling due to the positive AC motor control Compatibl... See More ⇒

Specs: MIXA600CF650TSF, MIXA600PF650TSF, MIXA60HU1200VA, MIXA60WH1200TEH, MIXA81WB1200TEH, MIXD200W650TEH, MIXD50W650TED, MIXD600PF650TSF, IHW20N120R3, MIXG120W1200TEH, MIXG180W1200TEH, MIXG240W1200TEH, MP6750, MP6752, MP6753, MP6757, MSAGA11F120D

Keywords - MIXD80PM650TMI transistor spec

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