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PDMB200E6 Spec and Replacement


   Type Designator: PDMB200E6
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 780 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 150 nS
   Package: MODULE

 PDMB200E6 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

PDMB200E6 specs

 ..1. Size:253K  nippon
 pdmb200e6.pdf pdf_icon

PDMB200E6

QS043-402-20392 2/5 94.0 0.25 80 12.0 11.0 12.0 11.0 12.0 7(G2) 2- 6.5 6(E2) 7 (C2E1) (E2) (C1) 1 2 3 6 1 2 3 5 4 5(E1) 4(G1) 3-M5 23.0 23.0 17.0 ... See More ⇒

Specs: MP6750 , MP6752 , MP6753 , MP6757 , MSAGA11F120D , MUBW30-12A6 , NXH80T120L2Q0 , NXH80T120L2Q0PG , RJH3047 , PM100CBS060 , PM15CMA060 , PM25CL1A120 , PS21265-AP , PS21265-P , PSTG25HDT12 , PSTG25HTT12 , PSTG50HST12 .

Keywords - PDMB200E6 transistor spec

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