PDMB200E6 Datasheet. Specs and Replacement

Type Designator: PDMB200E6  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 780 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 150 nS

Package: MODULE

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PDMB200E6 datasheet

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PDMB200E6

QS043-402-20392 2/5 94.0 0.25 80 12.0 11.0 12.0 11.0 12.0 7(G2) 2- 6.5 6(E2) 7 (C2E1) (E2) (C1) 1 2 3 6 1 2 3 5 4 5(E1) 4(G1) 3-M5 23.0 23.0 17.0 ... See More ⇒

Specs: MP6750, MP6752, MP6753, MP6757, MSAGA11F120D, MUBW30-12A6, NXH80T120L2Q0, NXH80T120L2Q0PG, CRG40T65AK5HD, PM100CBS060, PM15CMA060, PM25CL1A120, PS21265-AP, PS21265-P, PSTG25HDT12, PSTG25HTT12, PSTG50HST12

Keywords - PDMB200E6 transistor spec

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