PDMB200E6 Datasheet and Replacement
Type Designator: PDMB200E6
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 780 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 150 nS
Package: MODULE
PDMB200E6 substitution
PDMB200E6 Datasheet (PDF)
pdmb200e6.pdf
QS043-402-203922/5 94.00.258012.0 11.0 12.0 11.0 12.0 7(G2)2-6.56(E2)7(C2E1) (E2) (C1)1 2 361 2 3545(E1)4(G1)3-M5 23.0 23.0 17.0
Datasheet: MP6750 , MP6752 , MP6753 , MP6757 , MSAGA11F120D , MUBW30-12A6 , NXH80T120L2Q0 , NXH80T120L2Q0PG , GT45F122 , PM100CBS060 , PM15CMA060 , PM25CL1A120 , PS21265-AP , PS21265-P , PSTG25HDT12 , PSTG25HTT12 , PSTG50HST12 .
History: IKQ120N60TA
Keywords - PDMB200E6 transistor datasheet
PDMB200E6 cross reference
PDMB200E6 equivalent finder
PDMB200E6 lookup
PDMB200E6 substitution
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History: IKQ120N60TA
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