PDMB200E6 Datasheet and Replacement
Type Designator: PDMB200E6
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 780 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 150 nS
Package: MODULE
- IGBT Cross-Reference
PDMB200E6 Datasheet (PDF)
pdmb200e6.pdf
QS043-402-203922/5 94.00.258012.0 11.0 12.0 11.0 12.0 7(G2)2-6.56(E2)7(C2E1) (E2) (C1)1 2 361 2 3545(E1)4(G1)3-M5 23.0 23.0 17.0
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MMG300D120B6TC
Keywords - PDMB200E6 transistor datasheet
PDMB200E6 cross reference
PDMB200E6 equivalent finder
PDMB200E6 lookup
PDMB200E6 substitution
PDMB200E6 replacement
History: MMG300D120B6TC
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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