All IGBT. PDMB200E6 Datasheet

 

PDMB200E6 IGBT. Datasheet pdf. Equivalent


   Type Designator: PDMB200E6
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 780 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 150 nS
   Package: MODULE

 PDMB200E6 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

PDMB200E6 Datasheet (PDF)

 ..1. Size:253K  nippon
pdmb200e6.pdf

PDMB200E6
PDMB200E6

QS043-402-203922/5 94.00.258012.0 11.0 12.0 11.0 12.0 7(G2)2-6.56(E2)7(C2E1) (E2) (C1)1 2 361 2 3545(E1)4(G1)3-M5 23.0 23.0 17.0

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , JT075N065WED , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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