PSTG25HDT12 Datasheet. Specs and Replacement

Type Designator: PSTG25HDT12  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 45 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 35 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 17 nS

Coesⓘ - Output Capacitance, typ: 340 pF

Package: MODULE

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PSTG25HDT12 datasheet

 ..1. Size:122K  powersem
 pstg25hdt12.pdf pdf_icon

PSTG25HDT12

ECO-PACTM 1 Powerline N-Channel PSTG 25HDT12 Trench Gate- VCES = 1200 V IGBT Module VCE(sat) = 1.9 V IC25 = 35 A IC75 = 25 A ICM = 75 A Preliminary Data Sheet tSC = 10 s G NTC H C M BA L N Features Symbol Test Conditions Maximum Ratings TVJ = 25 C to 150 C 1200 V VCES Package with DCB ceramic base continous V VGES 20 plate and soldering pins for ... See More ⇒

 7.1. Size:212K  powersem
 pstg25htt12.pdf pdf_icon

PSTG25HDT12

ECO-PACTM 1 Powerline N-Channel PSTG 25HTT12 Trench Gate- VCES = 1200 V IGBT Triple Module VCE(sat) = 1.9 V IC25 = 35 A IC75 = 25 A ICM = 75 A Preliminary Data Sheet tSC = 10 s Features Symbol Test Conditions Maximum Ratings TVJ = 25 C to 150 C 1200 V VCES Package with DCB ceramic base continous V VGES 20 plate and soldering pins for PCB TC = 25 C; ... See More ⇒

Specs: NXH80T120L2Q0, NXH80T120L2Q0PG, PDMB200E6, PM100CBS060, PM15CMA060, PM25CL1A120, PS21265-AP, PS21265-P, IRGP4086, PSTG25HTT12, PSTG50HST12, PSTG75HST12, GT15Q102, MSG50N350FH, NGD8201AN, FMG2G400US60, BT40T60ANF

Keywords - PSTG25HDT12 transistor spec

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