All IGBT. PSTG25HTT12 Datasheet

 

PSTG25HTT12 Datasheet and Replacement


   Type Designator: PSTG25HTT12
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 45 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 510 pF
   Package: MODULE
 

 PSTG25HTT12 substitution

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PSTG25HTT12 Datasheet (PDF)

 ..1. Size:212K  powersem
 pstg25htt12.pdf pdf_icon

PSTG25HTT12

ECO-PACTM 1 Powerline N-Channel PSTG 25HTT12 Trench Gate- VCES = 1200 V IGBT Triple Module VCE(sat) = 1.9 V IC25 = 35 A IC75 = 25 A ICM = 75 A Preliminary Data Sheet tSC = 10 s Features Symbol Test Conditions Maximum Ratings TVJ = 25C to 150C 1200 V VCES Package with DCB ceramic base continous V VGES 20 plate and soldering pins for PCB TC = 25C;

 7.1. Size:122K  powersem
 pstg25hdt12.pdf pdf_icon

PSTG25HTT12

ECO-PACTM 1 Powerline N-Channel PSTG 25HDT12 Trench Gate- VCES = 1200 V IGBT Module VCE(sat) = 1.9 V IC25 = 35 A IC75 = 25 A ICM = 75 A Preliminary Data Sheet tSC = 10 s GNTCHCM BAL NFeatures Symbol Test Conditions Maximum Ratings TVJ = 25C to 150C 1200 V VCES Package with DCB ceramic base continous V VGES 20 plate and soldering pins for

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History: STGW40NC60W | IXGH30N60C3C1 | F4-150R12KS4 | DGW75N65CTL1 | IRGS4607D | MMG400KR120U | MMG200DR120DE

Keywords - PSTG25HTT12 transistor datasheet

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