PSTG75HST12 Datasheet. Specs and Replacement

Type Designator: PSTG75HST12  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 136 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 109 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 17 nS

Coesⓘ - Output Capacitance, typ: 510 pF

Package: MODULE

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PSTG75HST12 datasheet

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PSTG75HST12

ECO-PACTM 1 Powerline N-Channel PSTG 75HST12 Trench Gate- VCES = 1200 V IGBT Module VCE(sat) = 1.9 V IC25 = 109 A IC75 = 75 A ICM = 225 A Preliminary Data Sheet tSC = 10 s I L N H J M B E G A Features Symbol Test Conditions Maximum Ratings TVJ = 25 C to 150 C 1200 V VCES Package with DCB ceramic base continous V VGES 20 plate and soldering p... See More ⇒

Specs: PM100CBS060, PM15CMA060, PM25CL1A120, PS21265-AP, PS21265-P, PSTG25HDT12, PSTG25HTT12, PSTG50HST12, CRG75T60AK3HD, GT15Q102, MSG50N350FH, NGD8201AN, FMG2G400US60, BT40T60ANF, GT40QR21, IHW15N120R2, IXBH15N140

Keywords - PSTG75HST12 transistor spec

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