All IGBT. PSTG75HST12 Datasheet

 

PSTG75HST12 Datasheet and Replacement


   Type Designator: PSTG75HST12
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 136 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 109 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 510 pF
   Package: MODULE
 

 PSTG75HST12 substitution

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PSTG75HST12 Datasheet (PDF)

 ..1. Size:140K  powersem
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PSTG75HST12

ECO-PACTM 1 Powerline N-Channel PSTG 75HST12 Trench Gate- VCES = 1200 V IGBT Module VCE(sat) = 1.9 V IC25 = 109 A IC75 = 75 A ICM = 225 A Preliminary Data Sheet tSC = 10 s ILNHJMB EGAFeatures Symbol Test Conditions Maximum Ratings TVJ = 25C to 150C 1200 V VCES Package with DCB ceramic base continous V VGES 20 plate and soldering p

Datasheet: PM100CBS060 , PM15CMA060 , PM25CL1A120 , PS21265-AP , PS21265-P , PSTG25HDT12 , PSTG25HTT12 , PSTG50HST12 , SGH80N60UFD , GT15Q102 , MSG50N350FH , NGD8201AN , FMG2G400US60 , BT40T60ANF , GT40QR21 , IHW15N120R2 , IXBH15N140 .

History: SGT50T65FD1PT

Keywords - PSTG75HST12 transistor datasheet

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