All IGBT. PSTG75HST12 Datasheet

 

PSTG75HST12 IGBT. Datasheet pdf. Equivalent

Type Designator: PSTG75HST12

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 136

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.9

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 109

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 17

Maximum Collector Capacity (Cc), pF: 510

Package: MODULE

PSTG75HST12 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

PSTG75HST12 Datasheet (PDF)

0.1. pstg75hst12.pdf Size:140K _powersem

PSTG75HST12
PSTG75HST12

ECO-PACTM 1 Powerline N-Channel PSTG 75HST12 Trench Gate- VCES = 1200 V IGBT Module VCE(sat) = 1.9 V IC25 = 109 A IC75 = 75 A ICM = 225 A Preliminary Data Sheet tSC = 10 µs I L N H J M B E G A Features Symbol Test Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 V VCES • Package with DCB ceramic base continous V VGES ±20 plate and soldering p

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