BT40T60ANF Specs and Replacement
The BT40T60ANF is an insulated gate bipolar transistor designed for efficient switching in medium- to high-power electronic systems. By combining a MOSFET gate structure with a bipolar conduction path, this device offers high input impedance, low conduction losses, robust current handling capability. BT40T60ANF devices are commonly used in motor drives, switched-mode power supplies, uninterruptible power systems, industrial automation equipment.
Type Designator: BT40T60ANF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 280 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 170 pF
Package: TO3P
BT40T60ANF Substitution - IGBT ⓘ Cross-Reference Search
BT40T60ANF datasheet
bt40t60anf.pdf
R BT40T60 ANF BT40T60 ANF FS IGBT VCES 600 V IC 40 A RoHS Ptot TC=25 280 W VCE(sat) 1.8 V TO-3P N FS ... See More ⇒
bt40t120ckf.pdf
R BT40T120 CKF BT40T120 CKF VCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V ; ... See More ⇒
Specs: PSTG25HDT12 , PSTG25HTT12 , PSTG50HST12 , PSTG75HST12 , GT15Q102 , MSG50N350FH , NGD8201AN , FMG2G400US60 , CRG40T60AK3HD , GT40QR21 , IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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