BT40T60ANF IGBT. Datasheet pdf. Equivalent
Type Designator: BT40T60ANF
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 280
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 50
Collector Capacity (Cc), typ, pF: 170
Total Gate Charge (Qg), typ, nC: 165
Package: TO3P
BT40T60ANF Transistor Equivalent Substitute - IGBT Cross-Reference Search
BT40T60ANF Datasheet (PDF)
bt40t60anf.pdf

R BT40T60 ANF BT40T60 ANF FS IGBT VCES 600 V IC 40 A RoHS Ptot TC=25 280 W VCE(sat) 1.8 V TO-3PN FS
bt40t120ckf.pdf

R BT40T120 CKF BT40T120 CKF VCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V ;
bt40t120ckf.pdf

R BT40T120 CKF BT40T120 CKF VCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V ;
Datasheet: PSTG25HDT12 , PSTG25HTT12 , PSTG50HST12 , PSTG75HST12 , GT15Q102 , MSG50N350FH , NGD8201AN , FMG2G400US60 , FGPF4533 , GT40QR21 , IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 .



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IGBT: SGT10U60SDM2D | SGTQ40T120SDB2P7 | SGTQ30NE40I1DTR | SGTQ200V75SDB1PWD | SGTQ200V75SDB1PWA | SGTQ160V65SDB1APWA | SGTQ160V65SDB1APW | SGTP75V65SDS1P7 | SGTP75V65SDB1P7 | SGTP75V65FDB1P7 | SGTP75V65FDB1P4B