BT40T60ANF Datasheet. Specs and Replacement

The BT40T60ANF is an insulated gate bipolar transistor designed for efficient switching in medium- to high-power electronic systems. By combining a MOSFET gate structure with a bipolar conduction path, this device offers high input impedance, low conduction losses, robust current handling capability. BT40T60ANF devices are commonly used in motor drives, switched-mode power supplies, uninterruptible power systems, industrial automation equipment.

Type Designator: BT40T60ANF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 280 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 170 pF

Package: TO3P

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BT40T60ANF datasheet

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BT40T60ANF

R BT40T60 ANF BT40T60 ANF FS IGBT VCES 600 V IC 40 A RoHS Ptot TC=25 280 W VCE(sat) 1.8 V TO-3P N FS ... See More ⇒

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BT40T60ANF

R BT40T120 CKF BT40T120 CKF VCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V ; ... See More ⇒

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BT40T60ANF

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Specs: PSTG25HDT12, PSTG25HTT12, PSTG50HST12, PSTG75HST12, GT15Q102, MSG50N350FH, NGD8201AN, FMG2G400US60, CRG75T65AK5HD, GT40QR21, IHW15N120R2, IXBH15N140, IXBH15N160, IXBH15N170, IXBH9N140, IXBH9N160, IXBT15N170

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