All IGBT. BT40T60ANF Datasheet

 

BT40T60ANF IGBT. Datasheet pdf. Equivalent

Type Designator: BT40T60ANF

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 280

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.8

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 80

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 50

Maximum Collector Capacity (Cc), pF: 170

Package: TO3P

BT40T60ANF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BT40T60ANF Datasheet (PDF)

0.1. bt40t60anf.pdf Size:1322K _1

BT40T60ANF
BT40T60ANF

绝缘栅双极型晶体管 R ○ BT40T60 ANF 概述 特征参数 BT40T60 ANF 采用先进的沟槽 FS IGBT 技术,具有良好的导 VCES 600 V 通和开关特性,易并联使用的特点。 IC 40 A 符合 RoHS 指令要求。 Ptot (TC=25℃) 280 W VCE(sat) 1.8 V 特点 封装:TO-3P(N) ● 沟槽 FS 技术,正温度系数; ● 低通态压降:

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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