GT40QR21 Datasheet. Specs and Replacement

Type Designator: GT40QR21  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 230 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 120 nS

Package: TO3P

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GT40QR21 datasheet

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GT40QR21

GT40QR21 Discrete IGBTs Silicon N-Channel IGBT GT40QR21 GT40QR21 GT40QR21 GT40QR21 1. Applications 1. Applications 1. Applications 1. Applications Dedicated to Voltage-Resonant Inverter Switching Applications Note The product(s) described herein should not be used for any other application. 2. Features 2. Features 2. Features 2. Features (1) 6.5th generation (2) The RC-IGB... See More ⇒

Specs: PSTG25HTT12, PSTG50HST12, PSTG75HST12, GT15Q102, MSG50N350FH, NGD8201AN, FMG2G400US60, BT40T60ANF, SGP30N60, IHW15N120R2, IXBH15N140, IXBH15N160, IXBH15N170, IXBH9N140, IXBH9N160, IXBT15N170, FGH40T65SHDF_F155

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