GT40QR21 Datasheet and Replacement
Type Designator: GT40QR21
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 230 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 120 nS
Package: TO3P
GT40QR21 substitution
GT40QR21 Datasheet (PDF)
gt40qr21.pdf
GT40QR21Discrete IGBTs Silicon N-Channel IGBTGT40QR21GT40QR21GT40QR21GT40QR211. Applications1. Applications1. Applications1. Applications Dedicated to Voltage-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) 6.5th generation(2) The RC-IGB
Datasheet: PSTG25HTT12 , PSTG50HST12 , PSTG75HST12 , GT15Q102 , MSG50N350FH , NGD8201AN , FMG2G400US60 , BT40T60ANF , IRGP4066D , IHW15N120R2 , IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 , FGH40T65SHDF_F155 .
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