All IGBT. IXBH9N160 Datasheet

 

IXBH9N160 IGBT. Datasheet pdf. Equivalent

Type Designator: IXBH9N160

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 100

Maximum Collector-Emitter Voltage |Vce|, V: 1600

Collector-Emitter saturation Voltage |Vcesat|, V: 4.9

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 9

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 60

Maximum Collector Capacity (Cc), pF: 36

Package: TO247AD

IXBH9N160 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBH9N160 Datasheet (PDF)

0.1. ixbh9n160g.pdf Size:76K _ixys

IXBH9N160 IXBH9N160

IXBH 9N160G High Voltage BIMOSFETTM IC25 = 9 A Monolithic Bipolar VCES = 1600 V MOS Transistor VCE(sat) = 4.9 V typ. tfi = 70 ns N-Channel, Enhancement Mode C TO-247 AD MOSFET compatible G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features • High Voltage BIMOSFETTM VCES TJ = 25°C to 150°C 1600 V - replaces hig

7.1. ixbh9n140-160.pdf Size:55K _ixys

IXBH9N160 IXBH9N160

High Voltage BIMOSFETTM IXBH 9N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 9N160 IC25 = 9 A MOS Transistor VCE(sat) = 4.9 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 9N140 9N160 • International standard package VCES TJ = 25°C to 150°C 1400 160

 

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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