All IGBT. IXBH9N160 Datasheet

 

IXBH9N160 Datasheet and Replacement


   Type Designator: IXBH9N160
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 9 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 36 pF
   Qg ⓘ - Total Gate Charge, typ: 44 nC
   Package: TO247AD
 

 IXBH9N160 substitution

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IXBH9N160 Datasheet (PDF)

 ..1. Size:62K  1
 ixbh9n140 ixbh9n160.pdf pdf_icon

IXBH9N160

High Voltage BIMOSFETTM IXBH 9N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 9N160 IC25 = 9 AMOS Transistor VCE(sat) = 4.9 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features9N140 9N160 International standard packageVCES TJ = 25C to 150C 1400 160

 0.1. Size:76K  ixys
 ixbh9n160g.pdf pdf_icon

IXBH9N160

IXBH 9N160GHigh Voltage BIMOSFETTM IC25 = 9 AMonolithic Bipolar VCES = 1600 VMOS Transistor VCE(sat) = 4.9 V typ.tfi = 70 nsN-Channel, Enhancement ModeCTO-247 ADMOSFET compatibleGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features High Voltage BIMOSFETTMVCES TJ = 25C to 150C 1600 V- replaces hig

 7.1. Size:55K  ixys
 ixbh9n140-160.pdf pdf_icon

IXBH9N160

High Voltage BIMOSFETTM IXBH 9N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 9N160 IC25 = 9 AMOS Transistor VCE(sat) = 4.9 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features9N140 9N160 International standard packageVCES TJ = 25C to 150C 1400 160

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

Keywords - IXBH9N160 transistor datasheet

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