IGF40T120F Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IGF40T120F Specs and Replacement

   Type Designator: IGF40T120F
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 278 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   tr ⓘ - Rise Time, typ: 54 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Package: TO247

IGF40T120F Substitution

- IGBT ⓘ Cross-Reference Search

IGF40T120F datasheet

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IGF40T120F Lead Free Package and Finish General Description Using advanced IGBT technology, the IGBT offers VCES VCE(sat) IC superior conduction and switching performances,high 1200V 1.9V 40A avalanche ruggedness. Features Low saturation voltage and Quick switching saturation voltage is positive temperature relation and is easy to be used in parallel High... See More ⇒

Specs: IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 , FGH40T65SHDF_F155 , FGPF30N45TTU , GT30F133 , MBQ40T65FDSC , 2PG011 , BT60N60ANF , GT50N324 , MGD622 , FGA40N65SMD , FGL40N120AND , MM10G3T120B .