IGF40T120F Datasheet and Replacement
Type Designator: IGF40T120F
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 278 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 54 nS
Coesⓘ - Output Capacitance, typ: 170 pF
Package: TO247
IGF40T120F substitution
IGF40T120F Datasheet (PDF)
igf40t120f.pdf
IGF40T120F Lead Free Package and Finish General Description Using advanced IGBT technology, the IGBT offers VCES VCE(sat) IC superior conduction and switching performances,high 1200V 1.9V 40A avalanche ruggedness. Features: Low saturation voltage and Quick switching saturation voltage is positive temperature relation and is easy to be used in parallel High
Datasheet: IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 , FGH40T65SHDF_F155 , FGPF30N45TTU , CRG75T60AK3HD , MBQ40T65FDSC , 2PG011 , BT60N60ANF , GT50N324 , MGD622 , FGA40N65SMD , FGL40N120AND , MM10G3T120B .
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