All IGBT. IGF40T120F Datasheet


IGF40T120F IGBT. Datasheet pdf. Equivalent

Type Designator: IGF40T120F

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 278

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.9

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 80

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 54

Maximum Collector Capacity (Cc), pF: 170

Package: TO247

IGF40T120F Transistor Equivalent Substitute - IGBT Cross-Reference Search


IGF40T120F Datasheet (PDF)

0.1. igf40t120f.pdf Size:1113K _1


IGF40T120F Lead Free Package and Finish General Description Using advanced IGBT technology, the IGBT offers VCES VCE(sat) IC superior conduction and switching performances,high 1200V 1.9V 40A avalanche ruggedness. Features: Low saturation voltage and Quick switching saturation voltage is positive temperature relation and is easy to be used in parallel High

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .


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