All IGBT. IGF40T120F Datasheet

 

IGF40T120F IGBT. Datasheet pdf. Equivalent

Type Designator: IGF40T120F

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 278

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.9

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 80

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 54

Maximum Collector Capacity (Cc), pF: 170

Package: TO247

IGF40T120F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IGF40T120F Datasheet (PDF)

0.1. igf40t120f.pdf Size:1113K _1

IGF40T120F
IGF40T120F

IGF40T120F Lead Free Package and Finish General Description Using advanced IGBT technology, the IGBT offers VCES VCE(sat) IC superior conduction and switching performances,high 1200V 1.9V 40A avalanche ruggedness. Features: Low saturation voltage and Quick switching saturation voltage is positive temperature relation and is easy to be used in parallel High

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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