IGF40T120F IGBT. Datasheet pdf. Equivalent
Type Designator: IGF40T120F
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 278
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Collector-Emitter saturation Voltage |Vcesat|, V: 1.9
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 80
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 54
Maximum Collector Capacity (Cc), pF: 170
Package: TO247
IGF40T120F Transistor Equivalent Substitute - IGBT Cross-Reference Search
IGF40T120F Datasheet (PDF)
0.1. igf40t120f.pdf Size:1113K _1
IGF40T120F Lead Free Package and Finish General Description Using advanced IGBT technology, the IGBT offers VCES VCE(sat) IC superior conduction and switching performances,high 1200V 1.9V 40A avalanche ruggedness. Features: Low saturation voltage and Quick switching saturation voltage is positive temperature relation and is easy to be used in parallel High
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .



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IGBT: FGL40N120AND | FGA40N65SMD | MGD622 | GT50N324 | BT60N60ANF | 2PG011 | MBQ40T65FDSC | IGF40T120F | FGPF30N45TTU | FGH40T65SHDF_F155 | IXBT15N170