All IGBT. IGF40T120F Datasheet

 

IGF40T120F IGBT. Datasheet pdf. Equivalent


   Type Designator: IGF40T120F
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 278 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 54 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Qgⓘ - Total Gate Charge, typ: 239 nC
   Package: TO247

 IGF40T120F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IGF40T120F Datasheet (PDF)

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 igf40t120f.pdf

IGF40T120F IGF40T120F

IGF40T120F Lead Free Package and Finish General Description Using advanced IGBT technology, the IGBT offers VCES VCE(sat) IC superior conduction and switching performances,high 1200V 1.9V 40A avalanche ruggedness. Features: Low saturation voltage and Quick switching saturation voltage is positive temperature relation and is easy to be used in parallel High

Datasheet: IXBH15N140 , IXBH15N160 , IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 , FGH40T65SHDF_F155 , FGPF30N45TTU , GT30J127 , MBQ40T65FDSC , 2PG011 , BT60N60ANF , GT50N324 , MGD622 , FGA40N65SMD , FGL40N120AND , MM10G3T120B .

 

 
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