All IGBT. FGA40N65SMD Datasheet


FGA40N65SMD IGBT. Datasheet pdf. Equivalent

Type Designator: FGA40N65SMD

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 349

Maximum Collector-Emitter Voltage |Vce|, V: 650

Collector-Emitter saturation Voltage |Vcesat|, V: 1.9

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 80

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 20

Maximum Collector Capacity (Cc), pF: 180

Package: TO3PN

FGA40N65SMD Transistor Equivalent Substitute - IGBT Cross-Reference Search


FGA40N65SMD Datasheet (PDF)

0.1. fga40n65smd.pdf Size:1085K _1


August 2014FGA40N65SMD650 V, 40 A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchilds new series of field stop 2nd generation IGBTs offer the optimum performance Positive Temperature Co-efficient for Easy Parallel Operatingfor solar inverter, UPS, welder, induction heating, telecom, ESS

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