All IGBT. MM10G3T120B Equivalents Search

 

MM10G3T120B Specs and Replacement


   Type Designator: MM10G3T120B
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 17 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 29 nS
   Package: TO247
 

 MM10G3T120B Substitution

   - IGBT ⓘ Cross-Reference Search

 

MM10G3T120B specs

 ..1. Size:378K  macmic
 mm10g3t120b.pdf pdf_icon

MM10G3T120B

MM10G3T120B 1200V 10A IGBT March 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS High frequency switching application 1.Gate Medical appli... See More ⇒

Specs: IGF40T120F , MBQ40T65FDSC , 2PG011 , BT60N60ANF , GT50N324 , MGD622 , FGA40N65SMD , FGL40N120AND , TGPF30N43P , MM120G3T65BM , MM15G3T120B , MM20G3R135B , MM20G3T135B , MM25G3T120B , MM25G3U120BX , MM40G3T120B , MM40G3U120B .

History: HGTG20N60A4 | IRGP4066 | IRGP50B60PD1-EP

Keywords - MM10G3T120B transistor spec

 MM10G3T120B cross reference
 MM10G3T120B equivalent finder
 MM10G3T120B lookup
 MM10G3T120B substitution
 MM10G3T120B replacement

 

 
Back to Top

 


 
.