All IGBT. MM10G3T120B Datasheet

 

MM10G3T120B IGBT. Datasheet pdf. Equivalent

Type Designator: MM10G3T120B

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 125

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.85

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 17

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 29

Package: TO247

MM10G3T120B Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MM10G3T120B Datasheet (PDF)

0.1. mm10g3t120b.pdf Size:378K _macmic

MM10G3T120B
MM10G3T120B

MM10G3T120B1200V 10A IGBTMarch 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical appli

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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