All IGBT. MM75G3T65B Datasheet

 

MM75G3T65B IGBT. Datasheet pdf. Equivalent


   Type Designator: MM75G3T65B
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 417
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 115
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 40
   Total Gate Charge (Qg), typ, nC: 360
   Package: TO247

 MM75G3T65B Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MM75G3T65B Datasheet (PDF)

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 mm75g3t65b.pdf

MM75G3T65B MM75G3T65B

MM75G3T65B650V 75A IGBTMarch 2020 Version 01 RoHS CompliantPRODUCT FEATURES 650V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical ap

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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