All IGBT. MM75G3T65B Datasheet

 

MM75G3T65B Datasheet and Replacement


   Type Designator: MM75G3T65B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 417 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 115 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 40 nS
   Package: TO247
      - IGBT Cross-Reference

 

MM75G3T65B Datasheet (PDF)

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MM75G3T65B

MM75G3T65B650V 75A IGBTMarch 2020 Version 01 RoHS CompliantPRODUCT FEATURES 650V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical ap

Datasheet: MM40G3T120B , MM40G3U120B , MM40G3U120BX , MM40G3U65B , MM40G3U65BN , MM50G3T120BM , MM50G3U120BMX , MM60G3U65B , NCE80TD65BT , MMG100D170B , MMG100D170B6TC , MMG100H120H6HN , MMG100HB060B6EN , MMG100J120U6HN , MMG100J120U6T4N , MMG100J120U6TC , MMG100J120UZ6HN .

History: IXSK40N60BD1 | IXST35N120B | NCE20TH60BP | MSG100D350FHS | SG12N06T | MSG20T65HPT1 | MSG40T120FQC

Keywords - MM75G3T65B transistor datasheet

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