MM75G3T65B Specs and Replacement

Type Designator: MM75G3T65B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 417 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 115 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Package: TO247

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MM75G3T65B datasheet

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MM75G3T65B

MM75G3T65B 650V 75A IGBT March 2020 Version 01 RoHS Compliant PRODUCT FEATURES 650V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS High frequency switching application 1.Gate Medical ap... See More ⇒

Specs: MM40G3T120B, MM40G3U120B, MM40G3U120BX, MM40G3U65B, MM40G3U65BN, MM50G3T120BM, MM50G3U120BMX, MM60G3U65B, IXRH40N120, MMG100D170B, MMG100D170B6TC, MMG100H120H6HN, MMG100HB060B6EN, MMG100J120U6HN, MMG100J120U6T4N, MMG100J120U6TC, MMG100J120UZ6HN

Keywords - MM75G3T65B transistor spec

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