All IGBT. IXDA20N120AS Datasheet

 

IXDA20N120AS IGBT. Datasheet pdf. Equivalent


   Type Designator: IXDA20N120AS
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 38 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 75 nS
   Package: TO263

 IXDA20N120AS Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXDA20N120AS Datasheet (PDF)

 ..1. Size:211K  ixys
 ixda20n120as.pdf

IXDA20N120AS IXDA20N120AS

IXDA 20N120ASIC25 = 38 AHigh Voltage IGBTVCES = 1200 VVCE(sat) typ = 2.4 V Short Circuit SOA CapabilitySquare RBSOATAB13 hTABFeaturesIGBT NPT IGBTSymbol Conditions Maximum Ratings - low saturation voltageVCES TVJ = 25C to 150C 1200 V - positive temperature coefficient for easy parallelingVGES 20 V TO-263 packageIC25 TC = 25C 38 A - SMD ass

Datasheet: IRG4ZH50KD , IRG4ZH70UD , IRG4ZH71KD , IRGBC20S , IRGBC30S , IRGBC40S , IRGS14B40L , IRGS14C40L , CRG75T60AK3HD , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 , IXDN55N120D1 .

 

 
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