IXDA20N120AS Datasheet and Replacement
Type Designator: IXDA20N120AS
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 38 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 75 nS
Qg ⓘ - Total Gate Charge, typ: 70 nC
Package: TO263
IXDA20N120AS substitution
IXDA20N120AS Datasheet (PDF)
ixda20n120as.pdf
IXDA 20N120ASIC25 = 38 AHigh Voltage IGBTVCES = 1200 VVCE(sat) typ = 2.4 V Short Circuit SOA CapabilitySquare RBSOATAB13 hTABFeaturesIGBT NPT IGBTSymbol Conditions Maximum Ratings - low saturation voltageVCES TVJ = 25C to 150C 1200 V - positive temperature coefficient for easy parallelingVGES 20 V TO-263 packageIC25 TC = 25C 38 A - SMD ass
Datasheet: IRG4ZH50KD , IRG4ZH70UD , IRG4ZH71KD , IRGBC20S , IRGBC30S , IRGBC40S , IRGS14B40L , IRGS14C40L , CRG75T60AK3HD , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 , IXDN55N120D1 .
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