IXDA20N120AS Specs and Replacement
Type Designator: IXDA20N120AS
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 38 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Package: TO263
IXDA20N120AS Substitution - IGBT ⓘ Cross-Reference Search
IXDA20N120AS datasheet
ixda20n120as.pdf
IXDA 20N120AS IC25 = 38 A High Voltage IGBT VCES = 1200 V VCE(sat) typ = 2.4 V Short Circuit SOA Capability Square RBSOA TAB 1 3 h TAB Features IGBT NPT IGBT Symbol Conditions Maximum Ratings - low saturation voltage VCES TVJ = 25 C to 150 C 1200 V - positive temperature coefficient for easy paralleling VGES 20 V TO-263 package IC25 TC = 25 C 38 A - SMD ass... See More ⇒
Specs: IRG4ZH50KD , IRG4ZH70UD , IRG4ZH71KD , IRGBC20S , IRGBC30S , IRGBC40S , IRGS14B40L , IRGS14C40L , GT30F133 , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 , IXDN55N120D1 .
Keywords - IXDA20N120AS transistor spec
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