IXDA20N120AS Datasheet and Replacement
Type Designator: IXDA20N120AS
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 38 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 75 nS
Package: TO263
- IGBT Cross-Reference
IXDA20N120AS Datasheet (PDF)
ixda20n120as.pdf
IXDA 20N120ASIC25 = 38 AHigh Voltage IGBTVCES = 1200 VVCE(sat) typ = 2.4 V Short Circuit SOA CapabilitySquare RBSOATAB13 hTABFeaturesIGBT NPT IGBTSymbol Conditions Maximum Ratings - low saturation voltageVCES TVJ = 25C to 150C 1200 V - positive temperature coefficient for easy parallelingVGES 20 V TO-263 packageIC25 TC = 25C 38 A - SMD ass
Datasheet: IRG4ZH50KD , IRG4ZH70UD , IRG4ZH71KD , IRGBC20S , IRGBC30S , IRGBC40S , IRGS14B40L , IRGS14C40L , STGB10NB37LZ , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 , IXDN55N120D1 .
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
Keywords - IXDA20N120AS transistor datasheet
IXDA20N120AS cross reference
IXDA20N120AS equivalent finder
IXDA20N120AS lookup
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History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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