All IGBT. MMGT40H120XB6C Datasheet


MMGT40H120XB6C IGBT. Datasheet pdf. Equivalent

Type Designator: MMGT40H120XB6C

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 258

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.85

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 60

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 40

Package: MODULE

MMGT40H120XB6C Transistor Equivalent Substitute - IGBT Cross-Reference Search


MMGT40H120XB6C Datasheet (PDF)

..1. mmgt40h120xb6c.pdf Size:161K _macmic


MMGT40H120XB6C1200V 40A PIM ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba

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