MMGT40H120XB6C Datasheet and Replacement
Type Designator: MMGT40H120XB6C
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 258 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 40 nS
Package: MODULE
- IGBT Cross-Reference
MMGT40H120XB6C Datasheet (PDF)
mmgt40h120xb6c.pdf
MMGT40H120XB6C1200V 40A PIM ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MG25Q6ES51 | 7MBR75U2B060
Keywords - MMGT40H120XB6C transistor datasheet
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History: MG25Q6ES51 | 7MBR75U2B060
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