MMGT40H120XB6C Datasheet. Specs and Replacement

Type Designator: MMGT40H120XB6C  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 258 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Package: MODULE

  📄📄 Copy 

 MMGT40H120XB6C Substitution

- IGBTⓘ Cross-Reference Search

 

MMGT40H120XB6C datasheet

 ..1. Size:161K  macmic
 mmgt40h120xb6c.pdf pdf_icon

MMGT40H120XB6C

MMGT40H120XB6C 1200V 40A PIM Module September 2015 Version 0 RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba... See More ⇒

Specs: MMGT100J120UZ6C, MMGT100W120X6C, MMGT100WD120XB6C, MMGT10CB120XB6C, MMGT15CB120XB6C, MMGT15H120XB6C, MMGT200Q120B6C, MMGT25H120XB6C, IRG7IC28U, MMGT50H120X6C, MMGT50W120X6C, MMGT50W120XB6C, MMGT75H120X6C, MMGT75W120X6C, MMGT75W120XB6C, MMGT75WD120XB6C, MMGTU75J120U

Keywords - MMGT40H120XB6C transistor spec

 MMGT40H120XB6C cross reference
 MMGT40H120XB6C equivalent finder
 MMGT40H120XB6C lookup
 MMGT40H120XB6C substitution
 MMGT40H120XB6C replacement