MMGT40H120XB6C Specs and Replacement
Type Designator: MMGT40H120XB6C
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 258 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
tr ⓘ - Rise Time, typ: 40 nS
Package: MODULE
MMGT40H120XB6C Substitution
MMGT40H120XB6C datasheet
mmgt40h120xb6c.pdf
MMGT40H120XB6C 1200V 40A PIM Module September 2015 Version 0 RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba... See More ⇒
Specs: MMGT100J120UZ6C , MMGT100W120X6C , MMGT100WD120XB6C , MMGT10CB120XB6C , MMGT15CB120XB6C , MMGT15H120XB6C , MMGT200Q120B6C , MMGT25H120XB6C , SGP30N60 , MMGT50H120X6C , MMGT50W120X6C , MMGT50W120XB6C , MMGT75H120X6C , MMGT75W120X6C , MMGT75W120XB6C , MMGT75WD120XB6C , MMGTU75J120U .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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