All IGBT. MMGT40H120XB6C Datasheet

 

MMGT40H120XB6C IGBT. Datasheet pdf. Equivalent


   Type Designator: MMGT40H120XB6C
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 258
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 60
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 40
   Total Gate Charge (Qg), typ, nC: 210
   Package: MODULE

 MMGT40H120XB6C Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MMGT40H120XB6C Datasheet (PDF)

 ..1. Size:161K  macmic
 mmgt40h120xb6c.pdf

MMGT40H120XB6C MMGT40H120XB6C

MMGT40H120XB6C1200V 40A PIM ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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