MMGTU75J120U Datasheet and Replacement
Type Designator: MMGTU75J120U
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 410 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 45 nS
Package: SOT227
MMGTU75J120U substitution
MMGTU75J120U Datasheet (PDF)
mmgtu75j120u.pdf
MMGTU75J120U1200V 75A IGBT ModuleJuly 2015 Version 0 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Popular SOT-227 PackageAPPLICATIONS High frequency switching application
Datasheet: MMGT40H120XB6C , MMGT50H120X6C , MMGT50W120X6C , MMGT50W120XB6C , MMGT75H120X6C , MMGT75W120X6C , MMGT75W120XB6C , MMGT75WD120XB6C , TGD30N40P , FGA25S125P , JT015N065FED , 2M410A , 2M410B , 2M410B1 , 2M410V , 2M410V1 , 2M410G .
History: KGF30N135NDH | IXGT25N250HV | MMG450WE065B6EN
Keywords - MMGTU75J120U transistor datasheet
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History: KGF30N135NDH | IXGT25N250HV | MMG450WE065B6EN
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