MMGTU75J120U Datasheet. Specs and Replacement

Type Designator: MMGTU75J120U  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 410 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 45 nS

Package: SOT227

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MMGTU75J120U datasheet

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MMGTU75J120U

MMGTU75J120U 1200V 75A IGBT Module July 2015 Version 0 RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Popular SOT-227 Package APPLICATIONS High frequency switching application ... See More ⇒

Specs: MMGT40H120XB6C, MMGT50H120X6C, MMGT50W120X6C, MMGT50W120XB6C, MMGT75H120X6C, MMGT75W120X6C, MMGT75W120XB6C, MMGT75WD120XB6C, SGT40N60FD2PT, FGA25S125P, JT015N065FED, 2M410A, 2M410B, 2M410B1, 2M410V, 2M410V1, 2M410G

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