All IGBT. MMGTU75J120U Datasheet

 

MMGTU75J120U IGBT. Datasheet pdf. Equivalent


   Type Designator: MMGTU75J120U
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 410
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 100
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 45
   Total Gate Charge (Qg), typ, nC: 400
   Package: SOT227

 MMGTU75J120U Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MMGTU75J120U Datasheet (PDF)

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 mmgtu75j120u.pdf

MMGTU75J120U MMGTU75J120U

MMGTU75J120U1200V 75A IGBT ModuleJuly 2015 Version 0 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Popular SOT-227 PackageAPPLICATIONS High frequency switching application

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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