2M410B Datasheet. Specs and Replacement

Type Designator: 2M410B  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 350 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃

tr ⓘ - Rise Time, typ: 400 nS

Coesⓘ - Output Capacitance, typ: 500 pF

Package: MODULE

  📄📄 Copy 

 2M410B Substitution

- IGBTⓘ Cross-Reference Search

 

2M410B datasheet

 ..1. Size:227K  1
 2m410a 2m410b 2m410b1 2m410v 2m410v1 2m410g.pdf pdf_icon

2M410B

2410,,1,,1, , , ,... See More ⇒

 ..2. Size:227K  russia
 2m410b.pdf pdf_icon

2M410B

2410,,1,,1, , , ,... See More ⇒

 0.1. Size:227K  russia
 2m410b1.pdf pdf_icon

2M410B

2410,,1,,1, , , ,... See More ⇒

 9.1. Size:227K  russia
 2m410v.pdf pdf_icon

2M410B

2410,,1,,1, , , ,... See More ⇒

SHOW MORE

Specs: MMGT75H120X6C, MMGT75W120X6C, MMGT75W120XB6C, MMGT75WD120XB6C, MMGTU75J120U, FGA25S125P, JT015N065FED, 2M410A, YGP20N65T2, 2M410B1, 2M410V, 2M410V1, 2M410G, CI20T120P, IHW15N120E1, RJH3044, XNF15N60T

Keywords - 2M410B transistor spec

 2M410B cross reference
 2M410B equivalent finder
 2M410B lookup
 2M410B substitution
 2M410B replacement