2M410B Datasheet and Replacement
Type Designator: 2M410B
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 400 nS
Coesⓘ - Output Capacitance, typ: 500 pF
Package: MODULE
2M410B substitution
2M410B Datasheet (PDF)
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MII145-12A3 | MMG450WB170B
Keywords - 2M410B transistor datasheet
2M410B cross reference
2M410B equivalent finder
2M410B lookup
2M410B substitution
2M410B replacement
History: MII145-12A3 | MMG450WB170B



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