All IGBT. XNF15N60T Datasheet

 

XNF15N60T Datasheet and Replacement


   Type Designator: XNF15N60T
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 38 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 37 pF
   Qg ⓘ - Total Gate Charge, typ: 25 nC
   Package: TO-220F
 

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XNF15N60T Datasheet (PDF)

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XNF15N60T

Data Sheet XNF15N60T 600V/15A IGBT /PRODUCT FEATURES 2 + Advanced Trench+FS IGBT technology 1 Low Collector-Emitter Saturation voltage 3 With anti-parallel fast recovery diode TJ = 175 C Maximum junction temperature: TJ

Datasheet: 2M410B , 2M410B1 , 2M410V , 2M410V1 , 2M410G , CI20T120P , IHW15N120E1 , RJH3044 , IKW40T120 , YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 , FGH40T120SMD , FGH50T65SQD , NCE15TD60BD , NCE15TD60B , NCE15TD60BF .

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