All IGBT. XNF15N60T Datasheet

 

XNF15N60T IGBT. Datasheet pdf. Equivalent


   Type Designator: XNF15N60T
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 38 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.2 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 37 pF
   Qgⓘ - Total Gate Charge, typ: 25 nC
   Package: TO-220F

 XNF15N60T Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

XNF15N60T Datasheet (PDF)

 ..1. Size:1109K  1
 xnf15n60t.pdf

XNF15N60T XNF15N60T

Data Sheet XNF15N60T 600V/15A IGBT /PRODUCT FEATURES 2 + Advanced Trench+FS IGBT technology 1 Low Collector-Emitter Saturation voltage 3 With anti-parallel fast recovery diode TJ = 175 C Maximum junction temperature: TJ

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top