IXDN55N120 Datasheet and Replacement
Type Designator: IXDN55N120
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 450 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 500 pF
Package: SOT227B
- IGBT Cross-Reference
IXDN55N120 Datasheet (PDF)
ixdn55n120 ixdn55n120d1.pdf

IXDN 55N120 VCES = 1200 VHigh Voltage IGBTIXDN 55N120 D1 IC25 = 100 Awith optional DiodeVCE(sat) typ = 2.3 VShort Circuit SOA CapabilitySquare RBSOAC CminiBLOC, SOT-227 B E153432 EGG GE E IXDN 55N120 IXDN 55N120 D1ECE = Emitter , C = CollectorSymbol Conditions Maximum RatingsG = Gate, E = Emitter VCES TJ = 25C to 150C 1200 V Either Emitter terminal ca
ixdn55n120d1.pdf

IXDN 55N120 D1VCES = 1200 VHigh Voltage IGBTIC25 = 100 Awith optional DiodeVCE(sat) typ = 2.3 VShort Circuit SOA CapabilitySquare RBSOACminiBLOC, SOT-227 B E153432 EGGEECE = Emitter , C = CollectorSymbol Conditions Maximum RatingsG = Gate, E = Emitter VCES TJ = 25C to 150C 1200 V Either Emitter terminal can be used asVCGR TJ = 25C to 150
Datasheet: IRGS14C40L , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IRG4PC50UD , IXDN55N120D1 , IXDN75N120 , IXDT30N120 , IXDT30N120AU1 , IXDT30N120D1 , IXGA12N100 , IXGA12N100A , IXGA12N100AU1 .
History: NGTB25N120FL | DIM800FSM17-A | STGWA30M65DF2 | IRG7PH37K10D | 6MBP50NA060-01 | APTGF50X120TE3 | FD400R33KF2C
Keywords - IXDN55N120 transistor datasheet
IXDN55N120 cross reference
IXDN55N120 equivalent finder
IXDN55N120 lookup
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History: NGTB25N120FL | DIM800FSM17-A | STGWA30M65DF2 | IRG7PH37K10D | 6MBP50NA060-01 | APTGF50X120TE3 | FD400R33KF2C



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