IXDN55N120 Specs and Replacement
Type Designator: IXDN55N120
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 450 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
tr ⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 500 pF
Package: SOT227B
IXDN55N120 Substitution - IGBT ⓘ Cross-Reference Search
IXDN55N120 datasheet
ixdn55n120 ixdn55n120d1.pdf
IXDN 55N120 VCES = 1200 V High Voltage IGBT IXDN 55N120 D1 IC25 = 100 A with optional Diode VCE(sat) typ = 2.3 V Short Circuit SOA Capability Square RBSOA C C miniBLOC, SOT-227 B E153432 E G G G E E IXDN 55N120 IXDN 55N120 D1 E C E = Emitter , C = Collector Symbol Conditions Maximum Ratings G = Gate, E = Emitter VCES TJ = 25 C to 150 C 1200 V Either Emitter terminal ca... See More ⇒
Specs: IRGS14C40L , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IRG4PC50UD , IXDN55N120D1 , IXDN75N120 , IXDT30N120 , IXDT30N120AU1 , IXDT30N120D1 , IXGA12N100 , IXGA12N100A , IXGA12N100AU1 .
Keywords - IXDN55N120 transistor spec
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