All IGBT. IXDN55N120 Datasheet

 

IXDN55N120 Datasheet and Replacement


   Type Designator: IXDN55N120
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 450 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 500 pF
   Qg ⓘ - Total Gate Charge, typ: 240 nC
   Package: SOT227B
 

 IXDN55N120 substitution

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IXDN55N120 Datasheet (PDF)

 ..1. Size:72K  ixys
 ixdn55n120 ixdn55n120d1.pdf pdf_icon

IXDN55N120

IXDN 55N120 VCES = 1200 VHigh Voltage IGBTIXDN 55N120 D1 IC25 = 100 Awith optional DiodeVCE(sat) typ = 2.3 VShort Circuit SOA CapabilitySquare RBSOAC CminiBLOC, SOT-227 B E153432 EGG GE E IXDN 55N120 IXDN 55N120 D1ECE = Emitter , C = CollectorSymbol Conditions Maximum RatingsG = Gate, E = Emitter VCES TJ = 25C to 150C 1200 V Either Emitter terminal ca

 0.1. Size:78K  ixys
 ixdn55n120d1.pdf pdf_icon

IXDN55N120

IXDN 55N120 D1VCES = 1200 VHigh Voltage IGBTIC25 = 100 Awith optional DiodeVCE(sat) typ = 2.3 VShort Circuit SOA CapabilitySquare RBSOACminiBLOC, SOT-227 B E153432 EGGEECE = Emitter , C = CollectorSymbol Conditions Maximum RatingsG = Gate, E = Emitter VCES TJ = 25C to 150C 1200 V Either Emitter terminal can be used asVCGR TJ = 25C to 150

 9.1. Size:137K  ixys
 ixdn50n120au1.pdf pdf_icon

IXDN55N120

Datasheet: IRGS14C40L , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , STGW60V60DF , IXDN55N120D1 , IXDN75N120 , IXDT30N120 , IXDT30N120AU1 , IXDT30N120D1 , IXGA12N100 , IXGA12N100A , IXGA12N100AU1 .

Keywords - IXDN55N120 transistor datasheet

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