GPK100HF120D1 Datasheet and Replacement
Type Designator: GPK100HF120D1
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 431 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 62 nS
Coesⓘ - Output Capacitance, typ: 1350 pF
Package: MODULE
GPK100HF120D1 substitution
GPK100HF120D1 Datasheet (PDF)
gpk100hf120d1.pdf
GPK100HF120D1GPK100HF120D1IGBT Module 1200V/100A 2 in one-package Features 1200V100A,V =2.1V@100A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applicat
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: JNG20T60PI
Keywords - GPK100HF120D1 transistor datasheet
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History: JNG20T60PI
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