GPK100HF120D1 Specs and Replacement
Type Designator: GPK100HF120D1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 431 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 62 nS
Coesⓘ - Output Capacitance, typ: 1350 pF
Package: MODULE GPK100HF120D1 Substitution - IGBTⓘ Cross-Reference Search
GPK100HF120D1 datasheet
gpk100hf120d1.pdf
GPK100HF120D1 GPK100HF120D1 IGBT Module 1200V/100A 2 in one-package Features 1200V100A,V =2.1V@100A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxin s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applicat... See More ⇒
Specs: NCE15TD60B, NCE15TD60BF, NCE80TD65BP, NCE80TD65BT, SGT60T65FD1PN, SGT60T65FD1P7, SGT60T65FD1PS, SGT60T65FD1PT, XNF15N60T, GPK200HF120D2, GPU100HF120D1, GPU150HF120D2, GPU200HF120D2, GPU50HF120D1, GPU75HF120D1, HM15N120A, HM20N120AB
Keywords - GPK100HF120D1 transistor spec
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