All IGBT. GPK100HF120D1 Datasheet

 

GPK100HF120D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: GPK100HF120D1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 431 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 62 nS
   Coesⓘ - Output Capacitance, typ: 1350 pF
   Package: MODULE

 GPK100HF120D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GPK100HF120D1 Datasheet (PDF)

 ..1. Size:273K  cn hmsemi
 gpk100hf120d1.pdf

GPK100HF120D1 GPK100HF120D1

GPK100HF120D1GPK100HF120D1IGBT Module 1200V/100A 2 in one-package Features 1200V100A,V =2.1V@100A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applicat

Datasheet: NCE15TD60B , NCE15TD60BF , NCE80TD65BP , NCE80TD65BT , SGT60T65FD1PN , SGT60T65FD1P7 , SGT60T65FD1PS , SGT60T65FD1PT , FGPF4533 , GPK200HF120D2 , GPU100HF120D1 , GPU150HF120D2 , GPU200HF120D2 , GPU50HF120D1 , GPU75HF120D1 , HM15N120A , HM20N120AB .

 

 
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