All IGBT. GPK200HF120D2 Datasheet

 

GPK200HF120D2 IGBT. Datasheet pdf. Equivalent


   Type Designator: GPK200HF120D2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 862
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 400
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.1
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 145
   Collector Capacity (Cc), typ, pF: 2400
   Total Gate Charge (Qg), typ, nC: 1740
   Package: MODULE

 GPK200HF120D2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GPK200HF120D2 Datasheet (PDF)

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 gpk200hf120d2.pdf

GPK200HF120D2 GPK200HF120D2

GPK200HF120D2IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =2.1V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description DAXINs IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and other soft switching applications. Absolute

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