GPK200HF120D2 Specs and Replacement
Type Designator: GPK200HF120D2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 862 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 400 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 145 nS
Coesⓘ - Output Capacitance, typ: 2400 pF
Package: MODULE GPK200HF120D2 Substitution - IGBTⓘ Cross-Reference Search
GPK200HF120D2 datasheet
gpk200hf120d2.pdf
GPK200HF120D2 IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =2.1V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description DAXIN s IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and other soft switching applications. Absolute... See More ⇒
Specs: NCE15TD60BF, NCE80TD65BP, NCE80TD65BT, SGT60T65FD1PN, SGT60T65FD1P7, SGT60T65FD1PS, SGT60T65FD1PT, GPK100HF120D1, IRG4PF50W, GPU100HF120D1, GPU150HF120D2, GPU200HF120D2, GPU50HF120D1, GPU75HF120D1, HM15N120A, HM20N120AB, HM20N120T
Keywords - GPK200HF120D2 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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