GPK200HF120D2 IGBT. Datasheet pdf. Equivalent
Type Designator: GPK200HF120D2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 862 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 145 nS
Coesⓘ - Output Capacitance, typ: 2400 pF
Qgⓘ - Total Gate Charge, typ: 1740 nC
Package: MODULE
GPK200HF120D2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
GPK200HF120D2 Datasheet (PDF)
gpk200hf120d2.pdf
GPK200HF120D2IGBT Module 1200V/200A 2 in one-package Features 1200V200A,V =2.1V@200A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description DAXINs IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and other soft switching applications. Absolute
Datasheet: NCE15TD60BF , NCE80TD65BP , NCE80TD65BT , SGT60T65FD1PN , SGT60T65FD1P7 , SGT60T65FD1PS , SGT60T65FD1PT , GPK100HF120D1 , IKW40N65WR5 , GPU100HF120D1 , GPU150HF120D2 , GPU200HF120D2 , GPU50HF120D1 , GPU75HF120D1 , HM15N120A , HM20N120AB , HM20N120T .
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