All IGBT. GPU100HF120D1 Datasheet

 

GPU100HF120D1 Datasheet and Replacement


   Type Designator: GPU100HF120D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 431 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 63 nS
   Coesⓘ - Output Capacitance, typ: 1350 pF
   Qgⓘ - Total Gate Charge, typ: 870 nC
   Package: MODULE
      - IGBT Cross-Reference

 

GPU100HF120D1 Datasheet (PDF)

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GPU100HF120D1

GPU100HF120D1 GPU100HF120D1IGBT Module 1200V/100A 2 in one-package Features 1200V100A,V =3.2V@100A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applica

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IRGC16B60KB

Keywords - GPU100HF120D1 transistor datasheet

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