GPU100HF120D1 Datasheet and Replacement
Type Designator: GPU100HF120D1
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 431 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 63 nS
Coesⓘ - Output Capacitance, typ: 1350 pF
Package: MODULE
GPU100HF120D1 substitution
GPU100HF120D1 Datasheet (PDF)
gpu100hf120d1.pdf
GPU100HF120D1 GPU100HF120D1IGBT Module 1200V/100A 2 in one-package Features 1200V100A,V =3.2V@100A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applica
Datasheet: NCE80TD65BP , NCE80TD65BT , SGT60T65FD1PN , SGT60T65FD1P7 , SGT60T65FD1PS , SGT60T65FD1PT , GPK100HF120D1 , GPK200HF120D2 , NGTB75N65FL2 , GPU150HF120D2 , GPU200HF120D2 , GPU50HF120D1 , GPU75HF120D1 , HM15N120A , HM20N120AB , HM20N120T , HM20N120TB .
History: JNG25T120HFU1
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History: JNG25T120HFU1
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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