All IGBT. IXDN75N120 Datasheet

 

IXDN75N120 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXDN75N120
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 660 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 750 pF
   Qgⓘ - Total Gate Charge, typ: 360 nC
   Package: SOT227B

 IXDN75N120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXDN75N120 Datasheet (PDF)

 ..1. Size:71K  ixys
 ixdn75n120.pdf

IXDN75N120 IXDN75N120

IXDN 75N120 VCES = 1200 VHigh Voltage IGBTIC25 = 150 AVCE(sat) typ = 2.2 VShort Circuit SOA CapabilitySquare RBSOACminiBLOC, SOT-227 B E153432 EGGEEECE = Emitter , C = CollectorSymbol Conditions Maximum RatingsG = Gate, E = Emitter VCES TJ = 25C to 150C 1200 V Either Emitter terminal can be used asVCGR TJ = 25C to 150C; RGE = 20 kW 1200 VMain or

Datasheet: IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 , IXDN55N120D1 , YGW40N65F1A1 , IXDT30N120 , IXDT30N120AU1 , IXDT30N120D1 , IXGA12N100 , IXGA12N100A , IXGA12N100AU1 , IXGA12N100U1 , IXGA12N60C .

 

 
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