IXDN75N120 PDF and Equivalents Search

 

IXDN75N120 Specs and Replacement

Type Designator: IXDN75N120

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 660 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 750 pF

Package: SOT227B

 IXDN75N120 Substitution

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IXDN75N120 datasheet

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 ixdn75n120.pdf pdf_icon

IXDN75N120

IXDN 75N120 VCES = 1200 V High Voltage IGBT IC25 = 150 A VCE(sat) typ = 2.2 V Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E E C E = Emitter , C = Collector Symbol Conditions Maximum Ratings G = Gate, E = Emitter VCES TJ = 25 C to 150 C 1200 V Either Emitter terminal can be used as VCGR TJ = 25 C to 150 C; RGE = 20 kW 1200 V Main or... See More ⇒

Specs: IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 , IXDN55N120D1 , AOK40B65H2AL , IXDT30N120 , IXDT30N120AU1 , IXDT30N120D1 , IXGA12N100 , IXGA12N100A , IXGA12N100AU1 , IXGA12N100U1 , IXGA12N60C .

Keywords - IXDN75N120 transistor spec

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