All IGBT. IXDN75N120 Datasheet

 

IXDN75N120 Datasheet and Replacement


   Type Designator: IXDN75N120
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 660 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 750 pF
   Package: SOT227B
      - IGBT Cross-Reference

 

IXDN75N120 Datasheet (PDF)

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IXDN75N120

IXDN 75N120 VCES = 1200 VHigh Voltage IGBTIC25 = 150 AVCE(sat) typ = 2.2 VShort Circuit SOA CapabilitySquare RBSOACminiBLOC, SOT-227 B E153432 EGGEEECE = Emitter , C = CollectorSymbol Conditions Maximum RatingsG = Gate, E = Emitter VCES TJ = 25C to 150C 1200 V Either Emitter terminal can be used asVCGR TJ = 25C to 150C; RGE = 20 kW 1200 VMain or

Datasheet: IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 , IXDN55N120D1 , FGL60N100BNTD , IXDT30N120 , IXDT30N120AU1 , IXDT30N120D1 , IXGA12N100 , IXGA12N100A , IXGA12N100AU1 , IXGA12N100U1 , IXGA12N60C .

History: RJH60D2DPP-M0 | RJH60D2DPE | APT100GT60JRDL | APT60GT60SRG | RCM10N35 | APT11GP60BDQB | APT13GP120B

Keywords - IXDN75N120 transistor datasheet

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