All IGBT. HMG20N60A Datasheet

 

HMG20N60A Datasheet and Replacement


   Type Designator: HMG20N60A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 155 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 45 nS
   Coesⓘ - Output Capacitance, typ: 108 pF
   Qg ⓘ - Total Gate Charge, typ: 57 nC
   Package: TO3P
 

 HMG20N60A substitution

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HMG20N60A Datasheet (PDF)

 ..1. Size:627K  cn hmsemi
 hmg20n60a.pdf pdf_icon

HMG20N60A

HMG20N60A20A600V C 2HMG20N60A Field 1GStop UPS,SMPS PFC 3E 20A600VVCE(sat)( )=2.0V@IC=20A

 7.1. Size:1097K  cn hmsemi
 hmg20n65f.pdf pdf_icon

HMG20N60A

HMG20N65F IGBT Features 650V 20A,V = 1.70 V@20A CE(sat)(typ.) Field Stop IGBT Technology. 10s Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Benefits High Efficiency for Motor Control. Rugged Performance. Excellent Current Sharing in Parallel Operation Absolute Maxinmun Ratings Symbol Parameter Val

Datasheet: HM15N120A , HM20N120AB , HM20N120T , HM20N120TB , HM25N120T , HMG15N60 , HMG15N60D , HMG15N60F , RJP63K2DPP-M0 , HMG20N65F , HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A , HMG60N60T , KDG25R12KE3 , KDG40R12KT3 .

History: IGW40T60K

Keywords - HMG20N60A transistor datasheet

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