HMG20N60A Datasheet. Specs and Replacement

Type Designator: HMG20N60A  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 155 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 45 nS

Coesⓘ - Output Capacitance, typ: 108 pF

Package: TO3P

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HMG20N60A datasheet

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HMG20N60A

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HMG20N60A

HMG20N65F IGBT Features 650V 20A,V = 1.70 V@20A CE(sat)(typ.) Field Stop IGBT Technology. 10 s Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Benefits High Efficiency for Motor Control. Rugged Performance. Excellent Current Sharing in Parallel Operation Absolute Maxinmun Ratings Symbol Parameter Val... See More ⇒

Specs: HM15N120A, HM20N120AB, HM20N120T, HM20N120TB, HM25N120T, HMG15N60, HMG15N60D, HMG15N60F, RJP63K2DPP-M0, HMG20N65F, HMG40N60A, HMG40N60T, HMG40N65T, HMG60N60A, HMG60N60T, KDG25R12KE3, KDG40R12KT3

Keywords - HMG20N60A transistor spec

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