All IGBT. HMG40N60A Datasheet

 

HMG40N60A Datasheet and Replacement


   Type Designator: HMG40N60A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 290 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 80 nS
   Coesⓘ - Output Capacitance, typ: 180 pF
   Qgⓘ - Total Gate Charge, typ: 100 nC
   Package: TO3P
      - IGBT Cross-Reference

 

HMG40N60A Datasheet (PDF)

 ..1. Size:744K  cn hmsemi
 hmg40n60a.pdf pdf_icon

HMG40N60A

HMG40N60A40A600V C 2HMG40N60A Field Stop1G UPSSMPS PFC 3 E 40A600VVCE(sat)( )=1.8V@IC=40A

 6.1. Size:1214K  cn hmsemi
 hmg40n60t.pdf pdf_icon

HMG40N60A

HMG40N60T600V, 40A, Trench FS II IGBTGeneral Description:Using H&M SEMI's proprietary trench design and advanced FS(fieldstop)second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, andeasy parallel operation;FeaturesTrench FSII Technology offering Very low V Schematic diagramCEsat High speed switching

 7.1. Size:747K  cn hmsemi
 hmg40n65t.pdf pdf_icon

HMG40N60A

HMG40N65T650V 40A IGBT UPS PFC HMG40N65T (TO-247) 1 1 JESD-022 2 * -

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: HGT1S2N120CNDS | IXSH30N60B2D1 | IXGP12N120A3 | FGH30S150P

Keywords - HMG40N60A transistor datasheet

 HMG40N60A cross reference
 HMG40N60A equivalent finder
 HMG40N60A lookup
 HMG40N60A substitution
 HMG40N60A replacement

 

 
Back to Top

 


 
.