HMG40N60T Specs and Replacement
Type Designator: HMG40N60T
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 306 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 34 nS
Coesⓘ - Output Capacitance, typ: 151 pF
Package: TO247
HMG40N60T Substitution - IGBT ⓘ Cross-Reference Search
HMG40N60T datasheet
hmg40n60t.pdf
HMG40N60T 600V, 40A, Trench FS II IGBT General Description Using H&M SEMI's proprietary trench design and advanced FS (fieldstop)second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V Schematic diagram CE sat High speed switching ... See More ⇒
Specs: HM20N120TB , HM25N120T , HMG15N60 , HMG15N60D , HMG15N60F , HMG20N60A , HMG20N65F , HMG40N60A , FGH40N60SFD , HMG40N65T , HMG60N60A , HMG60N60T , KDG25R12KE3 , KDG40R12KT3 , CRG60T60AN3H , FGPF70N33BT , MBQ40T65QES .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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