All IGBT. HMG40N60T Datasheet

 

HMG40N60T Datasheet and Replacement


   Type Designator: HMG40N60T
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 306 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 34 nS
   Coesⓘ - Output Capacitance, typ: 151 pF
   Qg ⓘ - Total Gate Charge, typ: 195 nC
   Package: TO247
 

 HMG40N60T substitution

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HMG40N60T Datasheet (PDF)

 ..1. Size:1214K  cn hmsemi
 hmg40n60t.pdf pdf_icon

HMG40N60T

HMG40N60T600V, 40A, Trench FS II IGBTGeneral Description:Using H&M SEMI's proprietary trench design and advanced FS(fieldstop)second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, andeasy parallel operation;FeaturesTrench FSII Technology offering Very low V Schematic diagramCEsat High speed switching

 6.1. Size:744K  cn hmsemi
 hmg40n60a.pdf pdf_icon

HMG40N60T

HMG40N60A40A600V C 2HMG40N60A Field Stop1G UPSSMPS PFC 3 E 40A600VVCE(sat)( )=1.8V@IC=40A

 7.1. Size:747K  cn hmsemi
 hmg40n65t.pdf pdf_icon

HMG40N60T

HMG40N65T650V 40A IGBT UPS PFC HMG40N65T (TO-247) 1 1 JESD-022 2 * -

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: 2N6976 | STGW30M65DF2 | IRGP4740D | CM200RL-12NF | DIM800NSM33-F

Keywords - HMG40N60T transistor datasheet

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