All IGBT. HMG40N65T Datasheet


HMG40N65T IGBT. Datasheet pdf. Equivalent

Type Designator: HMG40N65T

Type: IGBT

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 280

Maximum Collector-Emitter Voltage |Vce|, V: 650

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 80

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9

Maximum G-E Threshold Voltag |VGE(th)|, V: 7

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 50

Collector Capacity (Cc), typ, pF: 175

Total Gate Charge (Qg), typ, nC: 165

Package: TO247

HMG40N65T Transistor Equivalent Substitute - IGBT Cross-Reference Search


HMG40N65T Datasheet (PDF)

 ..1. Size:747K  cn hmsemi


HMG40N65T650V 40A IGBT UPS PFC HMG40N65T (TO-247) 1 1 JESD-022 2 * -

 7.1. Size:1214K  cn hmsemi


HMG40N60T600V, 40A, Trench FS II IGBTGeneral Description:Using H&M SEMI's proprietary trench design and advanced FS(fieldstop)second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, andeasy parallel operation;FeaturesTrench FSII Technology offering Very low V Schematic diagramCEsat High speed switching

 7.2. Size:744K  cn hmsemi


HMG40N60A40A600V C 2HMG40N60A Field Stop1G UPSSMPS PFC 3 E 40A600VVCE(sat)( )=1.8V@IC=40A

Datasheet: HM25N120T , HMG15N60 , HMG15N60D , HMG15N60F , HMG20N60A , HMG20N65F , HMG40N60A , HMG40N60T , DG40F12T2 , HMG60N60A , HMG60N60T , KDG25R12KE3 , KDG40R12KT3 , CRG60T60AN3H , FGPF70N33BT , MBQ40T65QES , SSG55N60M .


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