HMG40N65T PDF and Equivalents Search

 

HMG40N65T Specs and Replacement


   Type Designator: HMG40N65T
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 280 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   tr ⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 175 pF
   Package: TO247
 

 HMG40N65T Substitution

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HMG40N65T datasheet

 ..1. Size:747K  cn hmsemi
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HMG40N65T

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 7.1. Size:1214K  cn hmsemi
 hmg40n60t.pdf pdf_icon

HMG40N65T

HMG40N60T 600V, 40A, Trench FS II IGBT General Description Using H&M SEMI's proprietary trench design and advanced FS (fieldstop)second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V Schematic diagram CE sat High speed switching ... See More ⇒

 7.2. Size:744K  cn hmsemi
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HMG40N65T

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Specs: HM25N120T , HMG15N60 , HMG15N60D , HMG15N60F , HMG20N60A , HMG20N65F , HMG40N60A , HMG40N60T , GT30J124 , HMG60N60A , HMG60N60T , KDG25R12KE3 , KDG40R12KT3 , CRG60T60AN3H , FGPF70N33BT , MBQ40T65QES , SSG55N60M .

History: DIM1200ASM45-TS001

Keywords - HMG40N65T transistor spec

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