HMG40N65T Datasheet and Replacement
Type Designator: HMG40N65T
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 280 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 175 pF
Qgⓘ - Total Gate Charge, typ: 165 nC
Package: TO247
- IGBT Cross-Reference
HMG40N65T Datasheet (PDF)
hmg40n65t.pdf
HMG40N65T650V 40A IGBT UPS PFC HMG40N65T (TO-247) 1 1 JESD-022 2 * -
hmg40n60t.pdf
HMG40N60T600V, 40A, Trench FS II IGBTGeneral Description:Using H&M SEMI's proprietary trench design and advanced FS(fieldstop)second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, andeasy parallel operation;FeaturesTrench FSII Technology offering Very low V Schematic diagramCEsat High speed switching
hmg40n60a.pdf
HMG40N60A40A600V C 2HMG40N60A Field Stop1G UPSSMPS PFC 3 E 40A600VVCE(sat)( )=1.8V@IC=40A
Datasheet: HM25N120T , HMG15N60 , HMG15N60D , HMG15N60F , HMG20N60A , HMG20N65F , HMG40N60A , HMG40N60T , GT50JR22 , HMG60N60A , HMG60N60T , KDG25R12KE3 , KDG40R12KT3 , CRG60T60AN3H , FGPF70N33BT , MBQ40T65QES , SSG55N60M .
History: IXGP12N100A | IXGH40N30BD1
Keywords - HMG40N65T transistor datasheet
HMG40N65T cross reference
HMG40N65T equivalent finder
HMG40N65T lookup
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HMG40N65T replacement
History: IXGP12N100A | IXGH40N30BD1
LIST
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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