HMG60N60T Specs and Replacement
Type Designator: HMG60N60T
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 321 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 142 nS
Coesⓘ - Output Capacitance, typ: 294 pF
Package: TO247
HMG60N60T Substitution - IGBT ⓘ Cross-Reference Search
HMG60N60T datasheet
hmg60n60a hmg60n60t.pdf
HMG60N60A/HMG60N60T 60A 600V C 2 HMG60N60A/HMG60N60T 1 G Field Stop UPS,SMPS PFC 3 E 60A 600V VCE(sat)( )=2.2V@IC=60A 12 12 ... See More ⇒
Specs: HMG15N60D , HMG15N60F , HMG20N60A , HMG20N65F , HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A , GT50JR22 , KDG25R12KE3 , KDG40R12KT3 , CRG60T60AN3H , FGPF70N33BT , MBQ40T65QES , SSG55N60M , SSG55N60Z , SSG55N60N .
History: IXGX60N60B2D1
Keywords - HMG60N60T transistor spec
HMG60N60T cross reference
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History: IXGX60N60B2D1
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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