HMG60N60T Datasheet. Specs and Replacement

Type Designator: HMG60N60T  📄📄 

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 321 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V

tr ⓘ - Rise Time, typ: 142 nS

Coesⓘ - Output Capacitance, typ: 294 pF

Qg ⓘ - Total Gate Charge, typ: 179 nC

Package: TO247

  📄📄 Copy 

 HMG60N60T Substitution

- IGBTⓘ Cross-Reference Search

 

HMG60N60T datasheet

 ..1. Size:896K  cn hmsemi
 hmg60n60a hmg60n60t.pdf pdf_icon

HMG60N60T

HMG60N60A/HMG60N60T 60A 600V C 2 HMG60N60A/HMG60N60T 1 G Field Stop UPS,SMPS PFC 3 E 60A 600V VCE(sat)( )=2.2V@IC=60A 12 12 ... See More ⇒

Specs: HMG15N60D, HMG15N60F, HMG20N60A, HMG20N65F, HMG40N60A, HMG40N60T, HMG40N65T, HMG60N60A, GT30J127, KDG25R12KE3, KDG40R12KT3, CRG60T60AN3H, FGPF70N33BT, MBQ40T65QES, SSG55N60M, SSG55N60Z, SSG55N60N

Keywords - HMG60N60T transistor spec

 HMG60N60T cross reference
 HMG60N60T equivalent finder
 HMG60N60T lookup
 HMG60N60T substitution
 HMG60N60T replacement