KDG25R12KE3 PDF and Equivalents Search

 

KDG25R12KE3 Specs and Replacement

Type Designator: KDG25R12KE3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 220 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 25 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 200 pF

Package: MODULE

 KDG25R12KE3 Substitution

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KDG25R12KE3 datasheet

 ..1. Size:810K  cn hmsemi
 kdg25r12ke3.pdf pdf_icon

KDG25R12KE3

KDG25R12KE3 KDG25R12KE3 IGBT Module Features IGBT Inverter Short Circuit Rated 10 s IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications Industrial Inverters Servo Applications Internal Circuit Diagram IGBT-Inverter Absolute Maximum Ratings (T = 25 un... See More ⇒

Specs: HMG15N60F , HMG20N60A , HMG20N65F , HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A , HMG60N60T , FGD4536 , KDG40R12KT3 , CRG60T60AN3H , FGPF70N33BT , MBQ40T65QES , SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P .

History: RJH60A85RDPE

Keywords - KDG25R12KE3 transistor spec

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