All IGBT. KDG25R12KE3 Datasheet

 

KDG25R12KE3 Datasheet and Replacement


   Type Designator: KDG25R12KE3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 220 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Qgⓘ - Total Gate Charge, typ: 515 nC
   Package: MODULE
      - IGBT Cross-Reference

 

KDG25R12KE3 Datasheet (PDF)

 ..1. Size:810K  cn hmsemi
 kdg25r12ke3.pdf pdf_icon

KDG25R12KE3

KDG25R12KE3 KDG25R12KE3 IGBT Module Features IGBT Inverter Short Circuit Rated 10s IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications Industrial Inverters Servo Applications Internal Circuit Diagram IGBT-Inverter Absolute Maximum Ratings (T = 25 un

Datasheet: HMG15N60F , HMG20N60A , HMG20N65F , HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A , HMG60N60T , RJP30H2A , KDG40R12KT3 , CRG60T60AN3H , FGPF70N33BT , MBQ40T65QES , SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P .

Keywords - KDG25R12KE3 transistor datasheet

 KDG25R12KE3 cross reference
 KDG25R12KE3 equivalent finder
 KDG25R12KE3 lookup
 KDG25R12KE3 substitution
 KDG25R12KE3 replacement

 

 
Back to Top

 


 
.