KDG40R12KT3 Datasheet. Specs and Replacement

Type Designator: KDG40R12KT3  📄📄 

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 255 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V

tr ⓘ - Rise Time, typ: 70 nS

Coesⓘ - Output Capacitance, typ: 210 pF

Qg ⓘ - Total Gate Charge, typ: 445 nC

Package: MODULE

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KDG40R12KT3 datasheet

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KDG40R12KT3

KDG40R12KT3 KDG40R12KT3 IGBT Module Features IGBT Inverter Short Circuit Rated 10 s IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications Industrial Inverters Servo Applications Internal Circuit Diagram IGBT-Inverter Absolute Maximum Ratings (T = 25 un... See More ⇒

Specs: HMG20N60A, HMG20N65F, HMG40N60A, HMG40N60T, HMG40N65T, HMG60N60A, HMG60N60T, KDG25R12KE3, IXGH60N60, CRG60T60AN3H, FGPF70N33BT, MBQ40T65QES, SSG55N60M, SSG55N60Z, SSG55N60N, SSG55N60P, YGW40N65F1

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