All IGBT. KDG40R12KT3 Datasheet

 

KDG40R12KT3 Datasheet and Replacement


   Type Designator: KDG40R12KT3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 255 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Qg ⓘ - Total Gate Charge, typ: 445 nC
   Package: MODULE
 

 KDG40R12KT3 substitution

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KDG40R12KT3 Datasheet (PDF)

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KDG40R12KT3

KDG40R12KT3 KDG40R12KT3 IGBT Module Features IGBT Inverter Short Circuit Rated 10s IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications Industrial Inverters Servo Applications Internal Circuit Diagram IGBT-Inverter Absolute Maximum Ratings (T = 25 un

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Keywords - KDG40R12KT3 transistor datasheet

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