All IGBT. KDG40R12KT3 Datasheet

 

KDG40R12KT3 IGBT. Datasheet pdf. Equivalent


   Type Designator: KDG40R12KT3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 255 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Qgⓘ - Total Gate Charge, typ: 445 nC
   Package: MODULE

 KDG40R12KT3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

KDG40R12KT3 Datasheet (PDF)

 ..1. Size:956K  cn hmsemi
 kdg40r12kt3.pdf

KDG40R12KT3 KDG40R12KT3

KDG40R12KT3 KDG40R12KT3 IGBT Module Features IGBT Inverter Short Circuit Rated 10s IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications Industrial Inverters Servo Applications Internal Circuit Diagram IGBT-Inverter Absolute Maximum Ratings (T = 25 un

Datasheet: HMG20N60A , HMG20N65F , HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A , HMG60N60T , KDG25R12KE3 , RJP30H2A , CRG60T60AN3H , FGPF70N33BT , MBQ40T65QES , SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P , YGW40N65F1 .

 

 
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