KDG40R12KT3 Specs and Replacement
Type Designator: KDG40R12KT3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 255 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 210 pF
Package: MODULE KDG40R12KT3 Substitution - IGBT ⓘ Cross-Reference Search
KDG40R12KT3 datasheet
kdg40r12kt3.pdf
KDG40R12KT3 KDG40R12KT3 IGBT Module Features IGBT Inverter Short Circuit Rated 10 s IGBT Inverter Low Saturation Voltage Low Switching Loss Low Stray Inductance Lead Free, Compliant With RoHS Requirement Applications Industrial Inverters Servo Applications Internal Circuit Diagram IGBT-Inverter Absolute Maximum Ratings (T = 25 un... See More ⇒
Specs: HMG20N60A , HMG20N65F , HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A , HMG60N60T , KDG25R12KE3 , FGPF4536 , CRG60T60AN3H , FGPF70N33BT , MBQ40T65QES , SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P , YGW40N65F1 .
History: IXGX50N120C3H1 | TGAN60N60F2DS | IXGX72N60A3H1 | SGL160N60UFD
Keywords - KDG40R12KT3 transistor spec
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History: IXGX50N120C3H1 | TGAN60N60F2DS | IXGX72N60A3H1 | SGL160N60UFD
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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