All IGBT. FGPF70N33BT Datasheet

 

FGPF70N33BT IGBT. Datasheet pdf. Equivalent


   Type Designator: FGPF70N33BT
   Type: IGBT
   Marking Code: GP70N33
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 48 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 160(pulse) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.3 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Qgⓘ - Total Gate Charge, typ: 49 nC
   Package: TO220F

 FGPF70N33BT Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGPF70N33BT Datasheet (PDF)

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 fgpf70n33bt.pdf

FGPF70N33BT FGPF70N33BT

November 2008FGPF70N33BTtm330V, 70A PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series oftrench IGBTs offer the optimum performance for PDP Low saturation voltage: VCE(sat) =1.7V @ IC = 70Aapplications where low conduction and switching losses are High input impedanceessential. Fast switchin

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