FGPF70N33BT Datasheet. Specs and Replacement

Type Designator: FGPF70N33BT  📄📄 

Type: IGBT

Marking Code: GP70N33

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 48 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 160(pulse) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.3 V

tr ⓘ - Rise Time, typ: 26 nS

Coesⓘ - Output Capacitance, typ: 140 pF

Qg ⓘ - Total Gate Charge, typ: 49 nC

Package: TO220F

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FGPF70N33BT datasheet

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FGPF70N33BT

November 2008 FGPF70N33BT tm 330V, 70A PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP Low saturation voltage VCE(sat) =1.7V @ IC = 70A applications where low conduction and switching losses are High input impedance essential. Fast switchin... See More ⇒

Specs: HMG40N60A, HMG40N60T, HMG40N65T, HMG60N60A, HMG60N60T, KDG25R12KE3, KDG40R12KT3, CRG60T60AN3H, GT50JR22, MBQ40T65QES, SSG55N60M, SSG55N60Z, SSG55N60N, SSG55N60P, YGW40N65F1, AOD5B65M1, AOTF15B65M1

Keywords - FGPF70N33BT transistor spec

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