All IGBT. FGPF70N33BT Datasheet

 

FGPF70N33BT Datasheet and Replacement


   Type Designator: FGPF70N33BT
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 48 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 160(pulse) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Package: TO220F
      - IGBT Cross-Reference

 

FGPF70N33BT Datasheet (PDF)

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FGPF70N33BT

November 2008FGPF70N33BTtm330V, 70A PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series oftrench IGBTs offer the optimum performance for PDP Low saturation voltage: VCE(sat) =1.7V @ IC = 70Aapplications where low conduction and switching losses are High input impedanceessential. Fast switchin

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IHW30N120R2 | GT30F123 | FGA15N120FTD | RJH60F6BDPQ-A0 | 2MBI50N-060 | IRG7I319U | SG50N06D2S

Keywords - FGPF70N33BT transistor datasheet

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