FGPF70N33BT Specs and Replacement
Type Designator: FGPF70N33BT
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 48 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 160(pulse) A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 26 nS
Coesⓘ - Output Capacitance, typ: 140 pF
Package: TO220F
FGPF70N33BT Substitution - IGBT ⓘ Cross-Reference Search
FGPF70N33BT datasheet
fgpf70n33bt.pdf
November 2008 FGPF70N33BT tm 330V, 70A PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP Low saturation voltage VCE(sat) =1.7V @ IC = 70A applications where low conduction and switching losses are High input impedance essential. Fast switchin... See More ⇒
Specs: HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A , HMG60N60T , KDG25R12KE3 , KDG40R12KT3 , CRG60T60AN3H , GT30J127 , MBQ40T65QES , SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P , YGW40N65F1 , AOD5B65M1 , AOTF15B65M1 .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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