SSG55N60M Datasheet. Specs and Replacement

Type Designator: SSG55N60M  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 195 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 55 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 250 pF

Qg ⓘ - Total Gate Charge, typ: 180 nC

Package: TO254

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SSG55N60M datasheet

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 ssg55n60.pdf pdf_icon

SSG55N60M

SSG55N60 series Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone (562) 404-7855 * Fax (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER S DATA SHEET 55 AMP /600 Volts TO-254 and TO-254Z 1.65 V saturation ultrafast IGBT TO-258 and TO-259 Features Lowest ON-resistance in the industry Hermetically Sealed, Isolated Pa... See More ⇒

 9.1. Size:1421K  secos
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SSG55N60M

SSG5509A N & P-Ch Enhancement Mode Power MOSFET N-Ch 6.1 A, 30 V, RDS(ON) 30 m Elektronische Bauelemente P-Ch -4.8 A, -30 V, RDS(ON) 55 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION The SSG5509A uses advanced trench technology to B provide excellent on-resistance extremely efficient and ... See More ⇒

Specs: HMG40N65T, HMG60N60A, HMG60N60T, KDG25R12KE3, KDG40R12KT3, CRG60T60AN3H, FGPF70N33BT, MBQ40T65QES, G50T65D, SSG55N60Z, SSG55N60N, SSG55N60P, YGW40N65F1, AOD5B65M1, AOTF15B65M1, CRG15T120BNR3S, GPU200HF120D2SE

Keywords - SSG55N60M transistor spec

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