All IGBT. MGF65A6H Datasheet

 

MGF65A6H Datasheet and Replacement


   Type Designator: MGF65A6H
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 405 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 330 pF
   Package: TO3P
 

 MGF65A6H substitution

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MGF65A6H Datasheet (PDF)

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MGF65A6H

VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A6H, MGF65A6H Data Sheet Description Packages The KGF65A6H and MGF65A6H are 650 V Field TO247-3L TO3P-3L Stop IGBTs. Sanken original trench structure decreases (4) (4) gate capacitance, and achieves high speed switching and switching loss reduction. Thus, these Field Stop IGBTs can improve the effic

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SII200N06

Keywords - MGF65A6H transistor datasheet

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