All IGBT. MGF65A6H Datasheet

 

MGF65A6H IGBT. Datasheet pdf. Equivalent


   Type Designator: MGF65A6H
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 405 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 330 pF
   Qgⓘ - Total Gate Charge, typ: 110 nC
   Package: TO3P

 MGF65A6H Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MGF65A6H Datasheet (PDF)

 ..1. Size:637K  sanken-ele
 kgf65a6h mgf65a6h.pdf

MGF65A6H MGF65A6H

VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A6H, MGF65A6H Data Sheet Description Packages The KGF65A6H and MGF65A6H are 650 V Field TO247-3L TO3P-3L Stop IGBTs. Sanken original trench structure decreases (4) (4) gate capacitance, and achieves high speed switching and switching loss reduction. Thus, these Field Stop IGBTs can improve the effic

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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