MGF65A6H PDF and Equivalents Search

 

MGF65A6H Specs and Replacement

Type Designator: MGF65A6H

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 405 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 70 nS

Coesⓘ - Output Capacitance, typ: 330 pF

Package: TO3P

 MGF65A6H Substitution

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MGF65A6H datasheet

 ..1. Size:637K  sanken-ele
 kgf65a6h mgf65a6h.pdf pdf_icon

MGF65A6H

VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A6H, MGF65A6H Data Sheet Description Packages The KGF65A6H and MGF65A6H are 650 V Field TO247-3L TO3P-3L Stop IGBTs. Sanken original trench structure decreases (4) (4) gate capacitance, and achieves high speed switching and switching loss reduction. Thus, these Field Stop IGBTs can improve the effic... See More ⇒

Specs: AOTF15B65M1 , CRG15T120BNR3S , GPU200HF120D2SE , RCF1565SL1 , RCP1565SL1 , RCB1565SL1 , RCD1565SL1 , KGF65A6H , SGT60N60FD1P7 , RJH65T14DPQ-A0 , GT30J122A , GT60M324 , DG25X12T2 , DG40X12T2 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL .

History: STGP10M65DF2 | GT50J328 | CY20AAJ-8H | JT100K120F2MA1E | AIGW50N65F5 | RJH30H1DPP-M0 | F3L200R07PE4

Keywords - MGF65A6H transistor spec

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