All IGBT. MGF65A6H Datasheet

 

MGF65A6H Datasheet and Replacement


   Type Designator: MGF65A6H
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 405 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 330 pF
   Package: TO3P
      - IGBT Cross-Reference

 

MGF65A6H Datasheet (PDF)

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MGF65A6H

VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A6H, MGF65A6H Data Sheet Description Packages The KGF65A6H and MGF65A6H are 650 V Field TO247-3L TO3P-3L Stop IGBTs. Sanken original trench structure decreases (4) (4) gate capacitance, and achieves high speed switching and switching loss reduction. Thus, these Field Stop IGBTs can improve the effic

Datasheet: AOTF15B65M1 , CRG15T120BNR3S , GPU200HF120D2SE , RCF1565SL1 , RCP1565SL1 , RCB1565SL1 , RCD1565SL1 , KGF65A6H , FGA60N65SMD , RJH65T14DPQ-A0 , GT30J122A , GT60M324 , DG25X12T2 , DG40X12T2 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL .

History: IXBF15N300C | APT30GT60BRD | RJP60V0DPM | GT10G101 | MG300N1US1 | IQGB300N60I4 | IXBF50N360

Keywords - MGF65A6H transistor datasheet

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