All IGBT. RJH65T14DPQ-A0 Datasheet

 

RJH65T14DPQ-A0 IGBT. Datasheet pdf. Equivalent


   Type Designator: RJH65T14DPQ-A0
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 250
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 100
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45
   Maximum G-E Threshold Voltag |VGE(th)|, V: 10
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 30
   Collector Capacity (Cc), typ, pF: 69
   Total Gate Charge (Qg), typ, nC: 80
   Package: TO247A

 RJH65T14DPQ-A0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH65T14DPQ-A0 Datasheet (PDF)

 ..1. Size:290K  renesas
 rjh65t14dpq-a0.pdf

RJH65T14DPQ-A0 RJH65T14DPQ-A0

Data Sheet RJH65T14DPQ-A0 650V - 50A - IGBT R07DS1256EJ0110Application: Induction Heating Rev.1.10 Microwave Oven Aug 31, 2018Features Optimized for current resonance application Low collector to emitter saturation voltage V = 1.45 V typ. (at I = 50 A, V = 15 V, Ta = 25 C) CE(sat) C GE Built in fast recovery diode in one package Trench gate and thin

 9.1. Size:68K  renesas
 rjh65s04dpq-a0.pdf

RJH65T14DPQ-A0 RJH65T14DPQ-A0

Preliminary DatasheetRJH65S04DPQ-A0 R07DS0849EJ0001650V - 50A - IGBT Rev.0.01Application: Inverter Jul 06, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at CC = 30

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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