RJH65T14DPQ-A0 PDF and Equivalents Search

 

RJH65T14DPQ-A0 Specs and Replacement

Type Designator: RJH65T14DPQ-A0

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 69 pF

Package: TO247A

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RJH65T14DPQ-A0 datasheet

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 rjh65t14dpq-a0.pdf pdf_icon

RJH65T14DPQ-A0

Data Sheet RJH65T14DPQ-A0 650V - 50A - IGBT R07DS1256EJ0110 Application Induction Heating Rev.1.10 Microwave Oven Aug 31, 2018 Features Optimized for current resonance application Low collector to emitter saturation voltage V = 1.45 V typ. (at I = 50 A, V = 15 V, Ta = 25 C) CE(sat) C GE Built in fast recovery diode in one package Trench gate and thin ... See More ⇒

 9.1. Size:68K  renesas
 rjh65s04dpq-a0.pdf pdf_icon

RJH65T14DPQ-A0

Preliminary Datasheet RJH65S04DPQ-A0 R07DS0849EJ0001 650V - 50A - IGBT Rev.0.01 Application Inverter Jul 06, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at CC = 30... See More ⇒

Specs: CRG15T120BNR3S , GPU200HF120D2SE , RCF1565SL1 , RCP1565SL1 , RCB1565SL1 , RCD1565SL1 , KGF65A6H , MGF65A6H , IKW75N60T , GT30J122A , GT60M324 , DG25X12T2 , DG40X12T2 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL , BG75B12UX3-I .

History: VS-GP100TS60SFPBF

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