GT60M324 Specs and Replacement
Type Designator: GT60M324
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 254 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Package: TO3P
GT60M324 Substitution - IGBT ⓘ Cross-Reference Search
GT60M324 datasheet
gt60m324.pdf
GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Unit mm Sixth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT tf = 0.11 s (typ.) (IC = 60A) FRD trr = 0.8 s (typ.) (di/dt = -20 A/ s) Low saturation ... See More ⇒
gt60m303.pdf
GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT tf = 0.25 s (TYP.) FRD trr = 0.7 s (TYP.) Low saturation voltage VCE (sat) = 2.1V (TYP.) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) ... See More ⇒
Specs: RCF1565SL1 , RCP1565SL1 , RCB1565SL1 , RCD1565SL1 , KGF65A6H , MGF65A6H , RJH65T14DPQ-A0 , GT30J122A , G50T65D , DG25X12T2 , DG40X12T2 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL , BG75B12UX3-I , BG100B12UX3-I , BG150B12LY2-I .
History: STGW40NC60KD | CY20AAJ-8H | JT100K120F2MA1E | STGP10M65DF2 | F3L200R07PE4 | RJH30H1DPP-M0 | GT50J328
Keywords - GT60M324 transistor spec
GT60M324 cross reference
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History: STGW40NC60KD | CY20AAJ-8H | JT100K120F2MA1E | STGP10M65DF2 | F3L200R07PE4 | RJH30H1DPP-M0 | GT50J328
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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