All IGBT. GT60M324 Datasheet

 

GT60M324 IGBT. Datasheet pdf. Equivalent


   Type Designator: GT60M324
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 60M324
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 254 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 10 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 190 nS
   Package: TO3P

 GT60M324 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT60M324 Datasheet (PDF)

 ..1. Size:204K  toshiba
 gt60m324.pdf

GT60M324 GT60M324

GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Unit: mmSixth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.11s (typ.) (IC = 60A) FRD : trr = 0.8s (typ.) (di/dt = -20 A/s) Low saturation

 8.1. Size:297K  toshiba
 gt60m301.pdf

GT60M324 GT60M324

 8.2. Size:420K  toshiba
 gt60m303.pdf

GT60M324 GT60M324

GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25s (TYP.) FRD : trr = 0.7s (TYP.) Low saturation voltage : VCE (sat) = 2.1V (TYP.) ABSOLUTE MAXIMUM RATINGS (Ta = 25C)

 8.3. Size:279K  toshiba
 gt60m302.pdf

GT60M324 GT60M324

Datasheet: RCF1565SL1 , RCP1565SL1 , RCB1565SL1 , RCD1565SL1 , KGF65A6H , MGF65A6H , RJH65T14DPQ-A0 , GT30J122A , MBQ50T65FDSC , DG25X12T2 , DG40X12T2 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL , BG75B12UX3-I , BG100B12UX3-I , BG150B12LY2-I .

 

 
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