All IGBT. GT60M324 Datasheet

 

GT60M324 Datasheet and Replacement


   Type Designator: GT60M324
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 254 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 190 nS
   Package: TO3P
 

 GT60M324 substitution

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GT60M324 Datasheet (PDF)

 ..1. Size:204K  toshiba
 gt60m324.pdf pdf_icon

GT60M324

GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Unit: mmSixth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.11s (typ.) (IC = 60A) FRD : trr = 0.8s (typ.) (di/dt = -20 A/s) Low saturation

 8.1. Size:297K  toshiba
 gt60m301.pdf pdf_icon

GT60M324

 8.2. Size:420K  toshiba
 gt60m303.pdf pdf_icon

GT60M324

GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25s (TYP.) FRD : trr = 0.7s (TYP.) Low saturation voltage : VCE (sat) = 2.1V (TYP.) ABSOLUTE MAXIMUM RATINGS (Ta = 25C)

 8.3. Size:279K  toshiba
 gt60m302.pdf pdf_icon

GT60M324

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History: NGTB50N60S1

Keywords - GT60M324 transistor datasheet

 GT60M324 cross reference
 GT60M324 equivalent finder
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 GT60M324 replacement

 

 
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