All IGBT. DG25X12T2 Datasheet

 

DG25X12T2 Datasheet and Replacement


   Type Designator: DG25X12T2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 573 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 17 nS
   Qg ⓘ - Total Gate Charge, typ: 190 nC
   Package: TO247
 

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DG25X12T2 Datasheet (PDF)

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DG25X12T2

DG25X12T2 IGBT Discrete DOSEMI IGBT DG25X12T2 1200V/25A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10s short circuit capability Low switching loss

Datasheet: RCP1565SL1 , RCB1565SL1 , RCD1565SL1 , KGF65A6H , MGF65A6H , RJH65T14DPQ-A0 , GT30J122A , GT60M324 , RJH3047 , DG40X12T2 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL , BG75B12UX3-I , BG100B12UX3-I , BG150B12LY2-I , BG150B12UY3-I .

History: F3L25R12W1T4-B27

Keywords - DG25X12T2 transistor datasheet

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