All IGBT. GD75HFF120C1S Datasheet

 

GD75HFF120C1S Datasheet and Replacement


   Type Designator: GD75HFF120C1S
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 412 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 28 nS
   Package: MODULE
      - IGBT Cross-Reference

 

GD75HFF120C1S Datasheet (PDF)

 ..1. Size:191K  cn starpower
 gd75hff120c1s.pdf pdf_icon

GD75HFF120C1S

GD75HFF120C1S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD75HFF120C1S 1200V/75A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features Low VCE(sat) Trench IGBT technology VCE(sat) with positi

Datasheet: KGF65A6H , MGF65A6H , RJH65T14DPQ-A0 , GT30J122A , GT60M324 , DG25X12T2 , DG40X12T2 , GD100HFX65C1S , YGW60N65F1A1 , SL40T65FL , BG75B12UX3-I , BG100B12UX3-I , BG150B12LY2-I , BG150B12UY3-I , BG200B12UY3-I , MPBW25N120B , MPBW40N60BF .

History: IXGT25N250HV | 2MBI300VJ-120-50 | RJP60V0DPM | MG300N1US1 | GT10G101 | TGAN60N65F2DR | IRG4BC10SD-S

Keywords - GD75HFF120C1S transistor datasheet

 GD75HFF120C1S cross reference
 GD75HFF120C1S equivalent finder
 GD75HFF120C1S lookup
 GD75HFF120C1S substitution
 GD75HFF120C1S replacement

 

 
Back to Top

 


 
.