All IGBT. GD75HFF120C1S Datasheet

 

GD75HFF120C1S IGBT. Datasheet pdf. Equivalent


   Type Designator: GD75HFF120C1S
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 412 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 28 nS
   Package: MODULE

 GD75HFF120C1S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GD75HFF120C1S Datasheet (PDF)

 ..1. Size:191K  cn starpower
 gd75hff120c1s.pdf

GD75HFF120C1S GD75HFF120C1S

GD75HFF120C1S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD75HFF120C1S 1200V/75A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features Low VCE(sat) Trench IGBT technology VCE(sat) with positi

Datasheet: KGF65A6H , MGF65A6H , RJH65T14DPQ-A0 , GT30J122A , GT60M324 , DG25X12T2 , DG40X12T2 , GD100HFX65C1S , IRG7R313U , SL40T65FL , BG75B12UX3-I , BG100B12UX3-I , BG150B12LY2-I , BG150B12UY3-I , BG200B12UY3-I , MPBW25N120B , MPBW40N60BF .

 

 
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