GD75HFF120C1S PDF and Equivalents Search

 

GD75HFF120C1S Specs and Replacement

Type Designator: GD75HFF120C1S

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 412 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Package: MODULE

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GD75HFF120C1S datasheet

 ..1. Size:191K  cn starpower
 gd75hff120c1s.pdf pdf_icon

GD75HFF120C1S

GD75HFF120C1S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD75HFF120C1S 1200V/75A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features Low VCE(sat) Trench IGBT technology VCE(sat) with positi... See More ⇒

Specs: KGF65A6H , MGF65A6H , RJH65T14DPQ-A0 , GT30J122A , GT60M324 , DG25X12T2 , DG40X12T2 , GD100HFX65C1S , GT30G124 , SL40T65FL , BG75B12UX3-I , BG100B12UX3-I , BG150B12LY2-I , BG150B12UY3-I , BG200B12UY3-I , MPBW25N120B , MPBW40N60BF .

History: IXST24N60B

Keywords - GD75HFF120C1S transistor spec

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