All IGBT. BG75B12UX3-I Datasheet

 

BG75B12UX3-I Datasheet and Replacement


   Type Designator: BG75B12UX3-I
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.84 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 63 nS
   Package: MODULE
 

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BG75B12UX3-I Datasheet (PDF)

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BG75B12UX3-I

BG75B12UX3-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=75A General Description Features BYD IGBT Power Module BG75B12UX3-I provides fast High speed IGBT technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD Low inductance and

Datasheet: RJH65T14DPQ-A0 , GT30J122A , GT60M324 , DG25X12T2 , DG40X12T2 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL , GT45F122 , BG100B12UX3-I , BG150B12LY2-I , BG150B12UY3-I , BG200B12UY3-I , MPBW25N120B , MPBW40N60BF , MPBW40N65BH , MPFF100R12RB .

History: SGL60N90D | APTGT50TDU170P

Keywords - BG75B12UX3-I transistor datasheet

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