BG75B12UX3-I IGBT. Datasheet pdf. Equivalent
Type Designator: BG75B12UX3-I
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.84 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 63 nS
Package: MODULE
BG75B12UX3-I Transistor Equivalent Substitute - IGBT Cross-Reference Search
BG75B12UX3-I Datasheet (PDF)
bg75b12ux3-i.pdf
BG75B12UX3-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=75A General Description Features BYD IGBT Power Module BG75B12UX3-I provides fast High speed IGBT technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD Low inductance and
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