All IGBT. BG75B12UX3-I Datasheet

 

BG75B12UX3-I IGBT. Datasheet pdf. Equivalent


   Type Designator: BG75B12UX3-I
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 75
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.84
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 63
   Package: MODULE

 BG75B12UX3-I Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BG75B12UX3-I Datasheet (PDF)

 ..1. Size:732K  cn byd
 bg75b12ux3-i.pdf

BG75B12UX3-I BG75B12UX3-I

BG75B12UX3-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=75A General Description Features BYD IGBT Power Module BG75B12UX3-I provides fast High speed IGBT technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD Low inductance and

Datasheet: RJH65T14DPQ-A0 , GT30J122A , GT60M324 , DG25X12T2 , DG40X12T2 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL , SGH80N60UFD , BG100B12UX3-I , BG150B12LY2-I , BG150B12UY3-I , BG200B12UY3-I , MPBW25N120B , MPBW40N60BF , MPBW40N65BH , MPFF100R12RB .

 

 
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