BG75B12UX3-I Specs and Replacement
Type Designator: BG75B12UX3-I
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.84 V @25℃
Package: MODULE BG75B12UX3-I Substitution - IGBT ⓘ Cross-Reference Search
BG75B12UX3-I datasheet
bg75b12ux3-i.pdf
BG75B12UX3-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V IC=75A General Description Features BYD IGBT Power Module BG75B12UX3-I provides fast High speed IGBT technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD Low inductance and ... See More ⇒
Specs: RJH65T14DPQ-A0 , GT30J122A , GT60M324 , DG25X12T2 , DG40X12T2 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL , RJH3047 , BG100B12UX3-I , BG150B12LY2-I , BG150B12UY3-I , BG200B12UY3-I , MPBW25N120B , MPBW40N60BF , MPBW40N65BH , MPFF100R12RB .
History: GT60M324 | JT100K120F2MA1E | STGP10M65DF2 | STGW40NC60KD | GT50J328 | RJH30H1DPP-M0 | CY20AAJ-8H
Keywords - BG75B12UX3-I transistor spec
BG75B12UX3-I cross reference
BG75B12UX3-I equivalent finder
BG75B12UX3-I lookup
BG75B12UX3-I substitution
BG75B12UX3-I replacement
History: GT60M324 | JT100K120F2MA1E | STGP10M65DF2 | STGW40NC60KD | GT50J328 | RJH30H1DPP-M0 | CY20AAJ-8H
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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