All IGBT. BG100B12UX3-I Datasheet

 

BG100B12UX3-I IGBT. Datasheet pdf. Equivalent


   Type Designator: BG100B12UX3-I
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 500
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 100
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.7
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 65
   Total Gate Charge (Qg), typ, nC: 640
   Package: MODULE

 BG100B12UX3-I Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BG100B12UX3-I Datasheet (PDF)

 ..1. Size:553K  cn byd
 bg100b12ux3-i.pdf

BG100B12UX3-I BG100B12UX3-I

BG100B12UX3-I IGBT Power Module BYD Microelectronics Co., Ltd. V =1200V I =100A CE CGeneral Description Features BYD IGBT Power Module BG100B12UX3-I provides fast High speed IGBT technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD Low inductanc

Datasheet: GT30J122A , GT60M324 , DG25X12T2 , DG40X12T2 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL , BG75B12UX3-I , SGT40N60FD2PN , BG150B12LY2-I , BG150B12UY3-I , BG200B12UY3-I , MPBW25N120B , MPBW40N60BF , MPBW40N65BH , MPFF100R12RB , MPFF50R12RB .

 

 
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