All IGBT. BG100B12UX3-I Datasheet

 

BG100B12UX3-I Datasheet and Replacement


   Type Designator: BG100B12UX3-I
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 65 nS
   Package: MODULE
 

 BG100B12UX3-I substitution

   - IGBT ⓘ Cross-Reference Search

 

BG100B12UX3-I Datasheet (PDF)

 ..1. Size:553K  cn byd
 bg100b12ux3-i.pdf pdf_icon

BG100B12UX3-I

BG100B12UX3-I IGBT Power Module BYD Microelectronics Co., Ltd. V =1200V I =100A CE CGeneral Description Features BYD IGBT Power Module BG100B12UX3-I provides fast High speed IGBT technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD Low inductanc

Datasheet: GT30J122A , GT60M324 , DG25X12T2 , DG40X12T2 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL , BG75B12UX3-I , CRG60T60AN3H , BG150B12LY2-I , BG150B12UY3-I , BG200B12UY3-I , MPBW25N120B , MPBW40N60BF , MPBW40N65BH , MPFF100R12RB , MPFF50R12RB .

History: IGC82T170S8RM | IGC76T65T8RM | STGW100H65FB2-4 | OM6517SA | IGC10T65QE | MIXA61H1200ED | SPT15N120T1

Keywords - BG100B12UX3-I transistor datasheet

 BG100B12UX3-I cross reference
 BG100B12UX3-I equivalent finder
 BG100B12UX3-I lookup
 BG100B12UX3-I substitution
 BG100B12UX3-I replacement

 

 
Back to Top

 


 
.