All IGBT. BG100B12UX3-I Datasheet

 

BG100B12UX3-I IGBT. Datasheet pdf. Equivalent


   Type Designator: BG100B12UX3-I
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 65 nS
   Qgⓘ - Total Gate Charge, typ: 640 nC
   Package: MODULE

 BG100B12UX3-I Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BG100B12UX3-I Datasheet (PDF)

 ..1. Size:553K  cn byd
 bg100b12ux3-i.pdf

BG100B12UX3-I BG100B12UX3-I

BG100B12UX3-I IGBT Power Module BYD Microelectronics Co., Ltd. V =1200V I =100A CE CGeneral Description Features BYD IGBT Power Module BG100B12UX3-I provides fast High speed IGBT technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD Low inductanc

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