All IGBT. BG100B12UX3-I Datasheet

 

BG100B12UX3-I Datasheet and Replacement


   Type Designator: BG100B12UX3-I
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 65 nS
   Package: MODULE
 

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BG100B12UX3-I Datasheet (PDF)

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BG100B12UX3-I

BG100B12UX3-I IGBT Power Module BYD Microelectronics Co., Ltd. V =1200V I =100A CE CGeneral Description Features BYD IGBT Power Module BG100B12UX3-I provides fast High speed IGBT technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD Low inductanc

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: APTGT75X120TE3 | SKM195GAR063DN

Keywords - BG100B12UX3-I transistor datasheet

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