All IGBT. BG200B12UY3-I Datasheet

 

BG200B12UY3-I Datasheet and Replacement


   Type Designator: BG200B12UY3-I
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1041 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 91 nS
   Coesⓘ - Output Capacitance, typ: 7500 pF
   Package: MODULE
 

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BG200B12UY3-I Datasheet (PDF)

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BG200B12UY3-I

BG200B12UY3-I IGBT Power Module BYD Microelectronics Co., Ltd. V =1200V I =200A CE CGeneral Description Features BYD IGBT Power Module BG200B12UY3-I provides fast High speed IGBT technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD Low inductanc

Datasheet: DG40X12T2 , GD100HFX65C1S , GD75HFF120C1S , SL40T65FL , BG75B12UX3-I , BG100B12UX3-I , BG150B12LY2-I , BG150B12UY3-I , IHW20N135R5 , MPBW25N120B , MPBW40N60BF , MPBW40N65BH , MPFF100R12RB , MPFF50R12RB , MPFF75R12RB , RGPR20NS43 , RGS80TSX2DHR .

History: DGTD65T15H2TF

Keywords - BG200B12UY3-I transistor datasheet

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 BG200B12UY3-I replacement

 

 
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