BG200B12UY3-I PDF and Equivalents Search

 

BG200B12UY3-I Specs and Replacement

Type Designator: BG200B12UY3-I

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1041 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃

tr ⓘ - Rise Time, typ: 91 nS

Coesⓘ - Output Capacitance, typ: 7500 pF

Package: MODULE

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BG200B12UY3-I datasheet

 ..1. Size:537K  cn byd
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BG200B12UY3-I

BG200B12UY3-I IGBT Power Module BYD Microelectronics Co., Ltd. V =1200V I =200A CE C General Description Features BYD IGBT Power Module BG200B12UY3-I provides fast High speed IGBT technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD Low inductanc... See More ⇒

Specs: DG40X12T2, GD100HFX65C1S, GD75HFF120C1S, SL40T65FL, BG75B12UX3-I, BG100B12UX3-I, BG150B12LY2-I, BG150B12UY3-I, YGW60N65F1A1, MPBW25N120B, MPBW40N60BF, MPBW40N65BH, MPFF100R12RB, MPFF50R12RB, MPFF75R12RB, RGPR20NS43, RGS80TSX2DHR

Keywords - BG200B12UY3-I transistor spec

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