All IGBT. BG200B12UY3-I Datasheet

 

BG200B12UY3-I IGBT. Datasheet pdf. Equivalent


   Type Designator: BG200B12UY3-I
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 1041
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 200
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 91
   Collector Capacity (Cc), typ, pF: 7500
   Total Gate Charge (Qg), typ, nC: 1280
   Package: MODULE

 BG200B12UY3-I Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BG200B12UY3-I Datasheet (PDF)

 ..1. Size:537K  cn byd
 bg200b12uy3-i.pdf

BG200B12UY3-I BG200B12UY3-I

BG200B12UY3-I IGBT Power Module BYD Microelectronics Co., Ltd. V =1200V I =200A CE CGeneral Description Features BYD IGBT Power Module BG200B12UY3-I provides fast High speed IGBT technology switching characteristic as well as high short circuit Including ultra fast & soft recovery anti-parallel FWD capability, which introduce the advanced IGBT chip/FWD Low inductanc

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