MPBW40N60BF Specs and Replacement
Type Designator: MPBW40N60BF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 280 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 52 nS
Coesⓘ - Output Capacitance, typ: 175 pF
Package: TO247
MPBW40N60BF Substitution - IGBT ⓘ Cross-Reference Search
MPBW40N60BF datasheet
mpbw40n60bf.pdf
MPBW40N60BF 600V 40A IGBT UPS TO-247 MPBW40N60BF MP40N60BF TO-247 1 - ... See More ⇒
mpbw40n65e.pdf
MPBW40N65E 650V-40A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to UPS positive temperature coefficient in VCEsat PFC Low VCEsat fast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distribution Type Marking Package Code MPBW40N65E MP40N65E TO-247-3 ... See More ⇒
Specs: GD75HFF120C1S , SL40T65FL , BG75B12UX3-I , BG100B12UX3-I , BG150B12LY2-I , BG150B12UY3-I , BG200B12UY3-I , MPBW25N120B , IRGP4086 , MPBW40N65BH , MPFF100R12RB , MPFF50R12RB , MPFF75R12RB , RGPR20NS43 , RGS80TSX2DHR , RGT50NL65D , RGT50NS65D .
Keywords - MPBW40N60BF transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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