MPBW40N60BF IGBT. Datasheet pdf. Equivalent

   Type Designator: MPBW40N60BF
   Type: IGBT + Anti-Parallel Diode
   Marking Code: MP40N60BF
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 280 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 52 nS
   Coesⓘ - Output Capacitance, typ: 175 pF
   Qgⓘ - Total Gate Charge, typ: 165 nC
   Package: TO247

MPBW40N60BF Transistor Equivalent Substitute - IGBT Cross-Reference Search

MPBW40N60BF Datasheet (PDF)

..1. Size:605K cn marching-power
mpbw40n60bf.pdf

MPBW40N60BF 600V 40A IGBT UPS TO-247 MPBW40N60BF MP40N60BF TO-247 1 -

6.1. Size:994K cn marching-power
mpbw40n65e.pdf

MPBW40N65E650V-40A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeMPBW40N65E MP40N65E TO-247-3

6.2. Size:719K cn marching-power
mpbw40n65bu.pdf