RGPR20NS43 IGBT. Datasheet pdf. Equivalent
Type Designator: RGPR20NS43
Type: IGBT + Built-in Zener Diodes
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 107 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 460 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 3.1 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 180 nS
Coesⓘ - Output Capacitance, typ: 175 pF
Qgⓘ - Total Gate Charge, typ: 14 nC
Package: LPDS
RGPR20NS43 Transistor Equivalent Substitute - IGBT Cross-Reference Search
RGPR20NS43 Datasheet (PDF)
rgpr20ns43.pdf
RGPR20NS43 430V 20A Ignition IGBT DatasheetlOutlineLPDS (TO-263S)BVCES43030V(2) IC20A(1) VCE(sat) (Typ.)1.6V(3) EAS250mJlFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Self-Clamped Inductive Switching Energy(2) Collector (1) 3) Built in Gate-Emitter Protection Diode (3) Emitter 4) Built in Gate-Emitter Res
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2