All IGBT. RGT80TS65DGC13 Datasheet

 

RGT80TS65DGC13 IGBT. Datasheet pdf. Equivalent


   Type Designator: RGT80TS65DGC13
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 234
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 70
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 56
   Collector Capacity (Cc), typ, pF: 87
   Total Gate Charge (Qg), typ, nC: 79
   Package: TO247

 RGT80TS65DGC13 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RGT80TS65DGC13 Datasheet (PDF)

 ..1. Size:4695K  rohm
 rgt80ts65dgc13.pdf

RGT80TS65DGC13 RGT80TS65DGC13

RGT80TS65DGC13 650V 40A Field Stop Trench IGBT DatasheetlOutline TO-247GEVCES650VIC(100C)40AVCE(sat) (Typ.)1.65VPD234W(1)(2)(3)lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2)(1) Gate2) Low Switching Loss(2) Collector*13) Short Circuit Withstand Time 5s(3) Emitter(1)4) Built in Very Fast & Soft Recovery FRD*1 Built in F

 4.1. Size:751K  rohm
 rgt80ts65d.pdf

RGT80TS65DGC13 RGT80TS65DGC13

RGT80TS65D 650V 40A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)40AVCE(sat) (Typ.)1.65VPD234W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) Low Switching Loss(2) Collector *1 3) Short Circuit Withstand Time 5s(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD*1 Built i

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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