RGT80TS65DGC13 PDF and Equivalents Search

 

RGT80TS65DGC13 Specs and Replacement

Type Designator: RGT80TS65DGC13

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 234 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 56 nS

Coesⓘ - Output Capacitance, typ: 87 pF

Package: TO247

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RGT80TS65DGC13 datasheet

 ..1. Size:4695K  rohm
 rgt80ts65dgc13.pdf pdf_icon

RGT80TS65DGC13

RGT80TS65DGC13 650V 40A Field Stop Trench IGBT Datasheet lOutline TO-247GE VCES 650V IC(100 C) 40A VCE(sat) (Typ.) 1.65V PD 234W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in F... See More ⇒

 4.1. Size:751K  rohm
 rgt80ts65d.pdf pdf_icon

RGT80TS65DGC13

RGT80TS65D 650V 40A Field Stop Trench IGBT Data Sheet lOutline TO-247N VCES 650V IC(100 C) 40A VCE(sat) (Typ.) 1.65V PD 234W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built i... See More ⇒

Specs: MPBW40N65BH, MPFF100R12RB, MPFF50R12RB, MPFF75R12RB, RGPR20NS43, RGS80TSX2DHR, RGT50NL65D, RGT50NS65D, SGP30N60, RGTH60TS65DGC13, BT15T120CNR, BT15T60A8F, BT15T60A9F, BT25T120CKR, BT40T120CKF, BT50T60ANFK, BT60T60ANFK

Keywords - RGT80TS65DGC13 transistor spec

 RGT80TS65DGC13 cross reference
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