All IGBT. RGT80TS65DGC13 Datasheet

 

RGT80TS65DGC13 IGBT. Datasheet pdf. Equivalent


   Type Designator: RGT80TS65DGC13
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 234 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 56 nS
   Coesⓘ - Output Capacitance, typ: 87 pF
   Qgⓘ - Total Gate Charge, typ: 79 nC
   Package: TO247

 RGT80TS65DGC13 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RGT80TS65DGC13 Datasheet (PDF)

 ..1. Size:4695K  rohm
 rgt80ts65dgc13.pdf

RGT80TS65DGC13 RGT80TS65DGC13

RGT80TS65DGC13 650V 40A Field Stop Trench IGBT DatasheetlOutline TO-247GEVCES650VIC(100C)40AVCE(sat) (Typ.)1.65VPD234W(1)(2)(3)lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2)(1) Gate2) Low Switching Loss(2) Collector*13) Short Circuit Withstand Time 5s(3) Emitter(1)4) Built in Very Fast & Soft Recovery FRD*1 Built in F

 4.1. Size:751K  rohm
 rgt80ts65d.pdf

RGT80TS65DGC13 RGT80TS65DGC13

RGT80TS65D 650V 40A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)40AVCE(sat) (Typ.)1.65VPD234W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) Low Switching Loss(2) Collector *1 3) Short Circuit Withstand Time 5s(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD*1 Built i

Datasheet: MPBW40N65BH , MPFF100R12RB , MPFF50R12RB , MPFF75R12RB , RGPR20NS43 , RGS80TSX2DHR , RGT50NL65D , RGT50NS65D , TGD30N40P , RGTH60TS65DGC13 , BT15T120CNR , BT15T60A8F , BT15T60A9F , BT25T120CKR , BT40T120CKF , BT50T60ANFK , BT60T60ANFK .

 

 
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