BT50T60ANFK Datasheet and Replacement
Type Designator: BT50T60ANFK
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 416 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 92 nS
Coesⓘ - Output Capacitance, typ: 189 pF
Package: TO3P
- IGBT Cross-Reference
BT50T60ANFK Datasheet (PDF)
bt50t60anfk.pdf
R BT50T60 ANFK BT50T60 ANFK FS IGBT VCES 600 V IC 50 A RoHS 416 W Ptot TC=25VCE(sat) 1.8 V TO-3PN FS
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: DIM600DDM17-A
Keywords - BT50T60ANFK transistor datasheet
BT50T60ANFK cross reference
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History: DIM600DDM17-A
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