BT50T60ANFK Datasheet and Replacement
Type Designator: BT50T60ANFK
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 416 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 92 nS
Coesⓘ - Output Capacitance, typ: 189 pF
Qg ⓘ - Total Gate Charge, typ: 303 nC
Package: TO3P
BT50T60ANFK substitution
BT50T60ANFK Datasheet (PDF)
bt50t60anfk.pdf
R BT50T60 ANFK BT50T60 ANFK FS IGBT VCES 600 V IC 50 A RoHS 416 W Ptot TC=25VCE(sat) 1.8 V TO-3PN FS
Datasheet: RGT50NS65D , RGT80TS65DGC13 , RGTH60TS65DGC13 , BT15T120CNR , BT15T60A8F , BT15T60A9F , BT25T120CKR , BT40T120CKF , YGW40N65F1 , BT60T60ANFK , DGTD120T25S1PT , DGTD120T40S1PT , DGTD65T15H2TF , DGTD65T40S2PT , DGTD65T50S1PT , DGTD65T60S2PT , KGF40N65KDC .
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