BT50T60ANFK Specs and Replacement
Type Designator: BT50T60ANFK
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 416 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 92 nS
Coesⓘ - Output Capacitance, typ: 189 pF
Package: TO3P
BT50T60ANFK Substitution - IGBTⓘ Cross-Reference Search
BT50T60ANFK datasheet
bt50t60anfk.pdf
R BT50T60 ANFK BT50T60 ANFK FS IGBT VCES 600 V IC 50 A RoHS 416 W Ptot TC=25 VCE(sat) 1.8 V TO-3P N FS ... See More ⇒
Specs: RGT50NS65D, RGT80TS65DGC13, RGTH60TS65DGC13, BT15T120CNR, BT15T60A8F, BT15T60A9F, BT25T120CKR, BT40T120CKF, IKW30N60H3, BT60T60ANFK, DGTD120T25S1PT, DGTD120T40S1PT, DGTD65T15H2TF, DGTD65T40S2PT, DGTD65T50S1PT, DGTD65T60S2PT, KGF40N65KDC
Keywords - BT50T60ANFK transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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