BT50T60ANFK IGBT. Datasheet pdf. Equivalent
Type Designator: BT50T60ANFK
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 416
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 100
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 92
Collector Capacity (Cc), typ, pF: 189
Total Gate Charge (Qg), typ, nC: 303
Package: TO3P
BT50T60ANFK Transistor Equivalent Substitute - IGBT Cross-Reference Search
BT50T60ANFK Datasheet (PDF)
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bt50t60anfk.pdf
bt50t60anfk.pdf
R BT50T60 ANFK BT50T60 ANFK FS IGBT VCES 600 V IC 50 A RoHS 416 W Ptot TC=25VCE(sat) 1.8 V TO-3PN FS
Datasheet: RGT50NS65D , RGT80TS65DGC13 , RGTH60TS65DGC13 , BT15T120CNR , BT15T60A8F , BT15T60A9F , BT25T120CKR , BT40T120CKF , MGD623S , BT60T60ANFK , DGTD120T25S1PT , DGTD120T40S1PT , DGTD65T15H2TF , DGTD65T40S2PT , DGTD65T50S1PT , DGTD65T60S2PT , KGF40N65KDC .
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IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ