BT60T60ANFK Datasheet and Replacement
Type Designator: BT60T60ANFK
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 403 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 124 nS
Coesⓘ - Output Capacitance, typ: 224 pF
Package: TO3P
- IGBT Cross-Reference
BT60T60ANFK Datasheet (PDF)
bt60t60anfk.pdf
R BT60T60 ANFK BT60T60 ANFK FS IGBT VCES 600 V IC 60 A RoHS Ptot TC=25 403 W VCE(sat) 1.85 V TO-3PN FS
Datasheet: RGT80TS65DGC13 , RGTH60TS65DGC13 , BT15T120CNR , BT15T60A8F , BT15T60A9F , BT25T120CKR , BT40T120CKF , BT50T60ANFK , TGPF30N43P , DGTD120T25S1PT , DGTD120T40S1PT , DGTD65T15H2TF , DGTD65T40S2PT , DGTD65T50S1PT , DGTD65T60S2PT , KGF40N65KDC , KGF75N65KDF .
History: AOTF5B65M2 | MMG300D120B6UC
Keywords - BT60T60ANFK transistor datasheet
BT60T60ANFK cross reference
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BT60T60ANFK lookup
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History: AOTF5B65M2 | MMG300D120B6UC
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