All IGBT. BT60T60ANFK Datasheet

 

BT60T60ANFK IGBT. Datasheet pdf. Equivalent


   Type Designator: BT60T60ANFK
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 403
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 120
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 124
   Collector Capacity (Cc), typ, pF: 224
   Total Gate Charge (Qg), typ, nC: 117
   Package: TO3P

 BT60T60ANFK Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BT60T60ANFK Datasheet (PDF)

 ..1. Size:924K  wuxi china
bt60t60anfk.pdf

BT60T60ANFK BT60T60ANFK

R BT60T60 ANFK BT60T60 ANFK FS IGBT VCES 600 V IC 60 A RoHS Ptot TC=25 403 W VCE(sat) 1.85 V TO-3PN FS

Datasheet: RGT80TS65DGC13 , RGTH60TS65DGC13 , BT15T120CNR , BT15T60A8F , BT15T60A9F , BT25T120CKR , BT40T120CKF , BT50T60ANFK , SGT40N60FD2PT , DGTD120T25S1PT , DGTD120T40S1PT , DGTD65T15H2TF , DGTD65T40S2PT , DGTD65T50S1PT , DGTD65T60S2PT , KGF40N65KDC , KGF75N65KDF .

 

 
Back to Top