BT60T60ANFK Specs and Replacement
Type Designator: BT60T60ANFK
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 403 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
tr ⓘ - Rise Time, typ: 124 nS
Coesⓘ - Output Capacitance, typ: 224 pF
Package: TO3P
BT60T60ANFK Substitution - IGBT ⓘ Cross-Reference Search
BT60T60ANFK datasheet
bt60t60anfk.pdf
R BT60T60 ANFK BT60T60 ANFK FS IGBT VCES 600 V IC 60 A RoHS Ptot TC=25 403 W VCE(sat) 1.85 V TO-3P N FS ... See More ⇒
Specs: RGT80TS65DGC13 , RGTH60TS65DGC13 , BT15T120CNR , BT15T60A8F , BT15T60A9F , BT25T120CKR , BT40T120CKF , BT50T60ANFK , CRG75T60AK3HD , DGTD120T25S1PT , DGTD120T40S1PT , DGTD65T15H2TF , DGTD65T40S2PT , DGTD65T50S1PT , DGTD65T60S2PT , KGF40N65KDC , KGF75N65KDF .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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