BT60T60ANFK Datasheet. Specs and Replacement

Type Designator: BT60T60ANFK  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 403 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 124 nS

Coesⓘ - Output Capacitance, typ: 224 pF

Package: TO3P

  📄📄 Copy 

 BT60T60ANFK Substitution

- IGBTⓘ Cross-Reference Search

 

BT60T60ANFK datasheet

 ..1. Size:924K  wuxi china
 bt60t60anfk.pdf pdf_icon

BT60T60ANFK

R BT60T60 ANFK BT60T60 ANFK FS IGBT VCES 600 V IC 60 A RoHS Ptot TC=25 403 W VCE(sat) 1.85 V TO-3P N FS ... See More ⇒

Specs: RGT80TS65DGC13, RGTH60TS65DGC13, BT15T120CNR, BT15T60A8F, BT15T60A9F, BT25T120CKR, BT40T120CKF, BT50T60ANFK, SGT40N60FD2PT, DGTD120T25S1PT, DGTD120T40S1PT, DGTD65T15H2TF, DGTD65T40S2PT, DGTD65T50S1PT, DGTD65T60S2PT, KGF40N65KDC, KGF75N65KDF

Keywords - BT60T60ANFK transistor spec

 BT60T60ANFK cross reference
 BT60T60ANFK equivalent finder
 BT60T60ANFK lookup
 BT60T60ANFK substitution
 BT60T60ANFK replacement