KWFFP10R12NS3 Specs and Replacement
Type Designator: KWFFP10R12NS3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 105 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 53 pF
Package: MODULE KWFFP10R12NS3 Substitution - IGBT ⓘ Cross-Reference Search
KWFFP10R12NS3 datasheet
kwffp10r12ns3.pdf
KWFFP10R12NS3 1200V 10A PIM IGBT NTC 100% RBSOA (2*IC) (VCE=1.85V) (Eoff=0.5mJ) (>10us) IGBT( - ) T ... See More ⇒
Specs: LEGM200BA120L2H, LEGM200BH120L2K, LEGM25BE120E2H, LEGM300BH120L2K, LEGM75BE120L5H, LEGM75BF120L5H, LEGM75TD120E2H, KWBW60N65F4EG, SGT40N60FD2PT, KWGFP25R12NS3, KWMFP40R12NS3, KWRFF100R12SWM, KWRFF40R12SWM, KWRFF50R12SWM, KWRFF75R12SWM, MG100HF12MIC1, MG100HF12MRC1
Keywords - KWFFP10R12NS3 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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