KWFFP10R12NS3 Datasheet and Replacement
Type Designator: KWFFP10R12NS3
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 105 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 53 pF
Package: MODULE
KWFFP10R12NS3 substitution
KWFFP10R12NS3 Datasheet (PDF)
kwffp10r12ns3.pdf
KWFFP10R12NS31200V 10A PIM IGBTNTC100% RBSOA(2*IC)(VCE=1.85V)(Eoff=0.5mJ)(>10us) IGBT(-)T
Datasheet: LEGM200BA120L2H , LEGM200BH120L2K , LEGM25BE120E2H , LEGM300BH120L2K , LEGM75BE120L5H , LEGM75BF120L5H , LEGM75TD120E2H , KWBW60N65F4EG , RJH60F7BDPQ-A0 , KWGFP25R12NS3 , KWMFP40R12NS3 , KWRFF100R12SWM , KWRFF40R12SWM , KWRFF50R12SWM , KWRFF75R12SWM , MG100HF12MIC1 , MG100HF12MRC1 .
History: IRG4BC10K
Keywords - KWFFP10R12NS3 transistor datasheet
KWFFP10R12NS3 cross reference
KWFFP10R12NS3 equivalent finder
KWFFP10R12NS3 lookup
KWFFP10R12NS3 substitution
KWFFP10R12NS3 replacement
History: IRG4BC10K
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